參數(shù)資料
型號: VN10KCSM4
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 170MA I(D) | LLCC
中文描述: 晶體管| MOSFET的| N溝道| 60V的五(巴西)直|電流170mA(?。﹟ LLCC
文件頁數(shù): 2/4頁
文件大?。?/td> 42K
代理商: VN10KCSM4
VN10KC
Vishay Siliconix
New Product
www.vishay.com
11-2
Document Number: 70967
S-04279
Rev. C, 16-Jul-01
Limits
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
120
60
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.2
0.8
2.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= 15 V
1
100
nA
V
DS
= 48 V, V
GS
= 0 V
10
Zero Gate Voltage Drain Current
I
DSS
T
A
= 125 C
500
A
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
1
0.75
A
V
GS
= 5 V, I
D
= 0.2 A
4
7.5
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 0.5 A
3
5
T
A
= 125 C
5.6
9
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
300
100
Common Source Output Conductance
b
g
os
V
DS
= 7.5 V, I
D
= 0.05 A
0.2
mS
Dynamic
Input Capacitance
C
iss
38
60
Output Capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
16
25
pF
Reverse Transfer Capacitance
C
rss
2
5
Switching
c
Turn-On Time
t
ON
V
DD
= 15 V, R
L
= 23
I
D
0.6 A, V
= 10 V
R
G
= 25
7
10
Turn-Off Time
t
OFF
9
10
ns
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VNDP06
2%.
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