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參數(shù)資料
| 型號(hào)： | VN10KN9 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 310MA I(D) | TO-52 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 310MA（?。﹟到52 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | VN10KN9 |
VN10KC
Vishay Siliconix
New Product
Document Number: 70967
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-1
N-Channel 60-V (D-S) MOSFET
V
(BR)DSS
Min (V)
60
r
DS(on)
Max ( )
5 @ V
GS
= 10 V
V
GS(th)
(V)
0.8 to 2.5
I
D
(A)
0.31
Zener Diode Input Protected
Low On-Resistance: 3
Ultralow Threshold: 1.2 V
Low Input Capacitance: 38 pF
Low Input and Output Leakage
Extra ESD Protection
Low Offset Voltage
Low-Voltage Operation
High-Speed, Easily Driven
Low Error Voltage
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Inductive Load Drivers
VN10KC
G
S
D
Top View
2
3
SC-59
1
Marking Code: F1
wll
F1 = Part Number Code for VN10KC
w
= Week Code
ll
= Lot Traceability
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
V
DS
V
GS
60
Gate-Source Voltage
15/–0.3
V
T
A
= 25 C
T
A
= 100 C
0.31
Continuous Drain Current
(T
J
= 150 C)
I
D
0.20
A
Pulsed Drain Current
a
I
DM
0.6
T
A
= 25 C
T
A
= 100 C
0.6
Power Dissipation
P
D
0.24
W
Maximum Junction-to-Ambient
R
thJA
T
J
, T
stg
208
C/W
Operating Junction and Storage Temperature Range
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
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