參數(shù)資料
型號(hào): VN10KLS
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流0.31A的N溝道增強(qiáng)型MOSFET)
中文描述: N溝道增強(qiáng)型MOSFET晶體管(最小漏源擊穿電壓60V的,夾斷電流0.31A的N溝道增強(qiáng)型MOSFET的)
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 89K
代理商: VN10KLS
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
Document Number: 70213
S-00200—Rev. E, 21-Feb-00
www.siliconix.com FaxBack 408-970-5600
11-1
N-Channel Enhancement-Mode MOSFET —Zener Gate
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
VN0610L
60
5 @ V
GS
= 10 V
5 @ V
GS
= 10 V
7.5 @ V
GS
= 10 V
0.8 to 2.5
0.27
VN10KLS
0.8 to 2.5
0.31
VN2222L
0.6 to 2.5
0.23
Zener Diode Input Protected
Low On-Resistance: 3
Ultralow Threshold: 1.2 V
Low Input Capacitance: 38 pF
Low Input and Output Leakage
Extra ESD Protection
Low Offset Voltage
Low-Voltage Operation
High-Speed, Easily Driven
Low Error Voltage
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Inductive Load Drivers
1
TO-92S
Top View
S
D
G
2
3
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
VN10KLS
VN0610L
VN2222L
Parameter
Symbol
VN2222L
VN0610L
VN10KLS
Unit
Drain-Source Voltage
V
DS
V
GS
60
60
V
Gate-Source Voltage
15/–0.3
15/–0.3
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
T
A
= 100 C
I
D
0.27
0.31
A
0.17
0.20
Pulsed Drain Current
a
I
DM
1
1.0
Power Dissipation
T
A
= 25 C
T
A
= 100 C
P
D
0.8
0.9
W
0.32
0.4
Maximum Junction-to-Ambient
R
thJA
T
J
, T
stg
156
139
C/W
Operating Junction and Storage Temperature Range
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
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