參數(shù)資料
型號: VNB28N04
廠商: 意法半導(dǎo)體
英文描述: Fully Autoprotected Power MOSFET(全自動保護(hù)功率MOSFET)
中文描述: 充分Autoprotected功率MOSFET(全自動保護(hù)功率MOSFET的)
文件頁數(shù): 1/13頁
文件大?。?/td> 139K
代理商: VNB28N04
VNP28N04FI
VNB28N04/VNV28N04
”O(jiān)MNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
June 1998
BLOCK DIAGRAM (
)
TYPE
V
clamp
R
DS(on)
0.035
0.035
0.035
I
lim
VNP28N04FI
VNB28N04
VNV28N04
42 V
42 V
42 V
28 A
28 A
28 A
I
LINEAR CURRENT LIMITATION
I
THERMAL SHUT DOWN
I
SHORT CIRCUIT PROTECTION
I
INTEGRATED CLAMP
I
LOW CURRENT DRAWN FROM INPUT PIN
I
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
I
ESD PROTECTION
I
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
I
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNP28N04FI, VNB28N04 and VNV28N04
are
monolithic
devices
STMicroelectronics
VIPower M0
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
made
using
Technology,
enviroments.
Fault feedbackcan be detected by monitoring the
voltageat the input pin.
1
10
PowerSO-10
1
2
3
1
3
D2PAK
TO-263
ISOWATT220
(
) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10;SOURCE =1,2,4,5; DRAIN = TAB
1/13
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