參數(shù)資料
型號: VNB49N0413TR
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | TO-263AB
中文描述: 晶體管| MOSFET的| N通道|到263AB
文件頁數(shù): 4/14頁
文件大?。?/td> 133K
代理商: VNB49N0413TR
4/14
VNP49N04FI / VNB49N04 / VNV49N04
SOURCE DRAIN DIODE
PROTECTIONS
(*) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(**) Parameters guaranteed by design/characterization
Symbol
V
SD
(*)
t
rr
(**)
Q
rr
(**)
I
RRM
(**)
Parameter
Test Conditions
Min
Typ
Max
1.8
Unit
V
ns
nC
A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=25A; V
IN
=0V
I
SD
=25A; di/dt=100A/
μ
s
V
DS
=30V; T
j
=25
°
C
(see test circuit, figure 5)
250
910
7.5
Symbol
Parameter
Test Conditions
Min
28
28
Typ
49
49
35
90
Max
70
70
50
150
Unit
A
A
μ
s
μ
s
I
LIM
Drain Current Limit
V
IN
=10V; V
DS
=13V
V
IN
=5V; V
DS
=13V
V
IN
=10V
V
IN
=5V
t
dlim
(**)
Step Response Current
Limit
Overtemperature
Shutdown
Overtemperature Reset
T
jsh
(**)
150
°
C
T
jrs
(**)
135
°
C
mA
mA
I
gf
(**)
Fault Sink Current
V
IN
=10V; V
DS
=13V
V
IN
=5V; V
DS
=13V
Starting T
j
=25
°
C; V
DS
=20V
V
IN
=10V; R
gen
=1K
;
L=6mH
50
20
E
as
(**)
Single Pulse
Avalanche Energy
4
J
2
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