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參數(shù)資料
| 型號： | VNB49N0413TR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N通道|到263AB |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 133K |
| 代理商： | VNB49N0413TR |
5/14
VNP49N04FI / VNB49N04 / VNV49N04
PROTECTION FEATURES
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC up to 50KHz. The only difference
from the user’s standpoint is that a small DC
current (I
) flows into the INPUT pin in order to
supply the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 42V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current I
to I
whatever the
INPUT pin voltage. When the current limiter is
active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction
overtemperature threshold T
jsh
.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:
these are based on sensing the chip temperature
and are not dependent on the input voltage. The
location of the sensing element on the chip in the
power stage area ensures fast, accuratedetection
of the junction temperature. Overtemperature
cutout occurs at minimum 150
°
C. The device is
automatically restarted when the chip temperature
falls below 135
°
C.
- STATUS FEEDBACK:
in the case of an overtemperature faultcondition, a
status feedback is provided through the INPUT
pin. The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100
.
The
failure can be detected by monitoring the voltage
at the INPUT pin, which will be close to ground
potential. Additional features of this device are
ESD protection according to the Human Body
model and theability to be driven from a TTL Logic
circuit (with a small increase in
R
DS(ON)
).
temperature
may
reach
the
1
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