參數(shù)資料
型號: VNB49N04
廠商: 意法半導體
英文描述: “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
中文描述: “OMNIFET”:充分AUTOPROTECTED功率MOSFET
文件頁數(shù): 3/14頁
文件大?。?/td> 133K
代理商: VNB49N04
3/14
VNP49N04FI / VNB49N04 / VNV49N04
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(-40
°
C < T
j
< 125
°
C, unless otherwise specified)
OFF
ON (*)
DYNAMIC
SWITCHING (**)
Symbol
Parameter
Value
D2PAK
1
62.5
Unit
PowerSO-10
1
50
ISOWATT220
3.12
62.5
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
}}}
Thermal Resistance Junction-ambient
MAX
MAX
°
C/W
°
C/W
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CLAMP
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage Drain
Current (V
IN
=0V)
Supply Current from Input
Pin
I
D
=200 mA; V
IN
=0
34
42
50
V
V
CLTH
I
D
=2mA; V
IN
=0
33
V
V
INCL
I
IN
= -1mA
-1.2
-0.1
V
I
DSS
V
DS
=13V; V
IN
=0V
V
DS
=25V; V
IN
=0V
70
220
μ
A
μ
A
I
ISS
V
DS
=0V; V
IN
=10V
250
550
μ
A
Symbol
V
IN(th)
Parameter
Test Conditions
Min
0.8
Typ
Max
3
0.04
0.05
Unit
V
Input Threshold Voltage
Static Drain-source On
Resistance
V
DS
=V
IN;
I
D
+ I
IN
=1mA
V
IN
=10V; I
D
=25A
V
IN
=5V; I
D
=25A
R
DS(on)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
g
fs
(*)
Forward
Transconductance
Output Capacitance
V
DS
=13V; I
D
=25A;
T
c
=25
°
C
25
30
S
C
OSS
V
DS
=13V; f=1MHz; V
IN
=0V;
T
c
=25
°
C
1100
1500
pF
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Parameter
Test Conditions
Min
Typ
200
1300
800
300
1.3
3.8
12
6.1
Max
600
3600
2400
900
3.8
10.4
24
17
Unit
ns
ns
ns
ns
μ
s
μ
s
μ
s
μ
s
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DS
=15V; I
D
=25A
V
gen
=10V; R
gen
=10
(see figure 3)
V
DS
=15V; I
D
=25A
V
gen
=10V; R
gen
=1000
(see figure 3)
(di/dt)
on
Turn-on Current Slope
V
DS
=15V; I
D
=25A
V
IN
=10V; R
gen
=10
V
DS
=15V; I
D
=25A; V
IN
=10V
25
A/
μ
s
Q
i
Total Input Charge
100
nC
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNB49N04 制造商:STMicroelectronics 功能描述:MOSFET SMART SWITCH D2-PAK
VNB49N0413TR 功能描述:電源開關(guān) IC - 配電 OMNIFET POWER MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻(最大值):85 mOhms 開啟時間(最大值):400 us 關(guān)閉時間(最大值):20 us 工作電源電壓:3.2 V to 6.5 V 電源電流(最大值): 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5
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VNB49N04TR-E 功能描述:電源開關(guān) IC - 配電 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻(最大值):85 mOhms 開啟時間(最大值):400 us 關(guān)閉時間(最大值):20 us 工作電源電壓:3.2 V to 6.5 V 電源電流(最大值): 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5
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