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參數(shù)資料
| 型號(hào)： | VND5N07-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | ？OMNIFET？：完全AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 367K |
| 代理商： | VND5N07-1 |
VND5N07/VND5N07-1/VNP5N07FI/K5N07FM
4/15
ELECTRICAL CHARACTERISTICS
(cont’d)
Table 9. Source Drain Diode
Symbol
Note: 4. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
5. Parameters guaranteed by design/characterization.
Table 10. Protection
Symbol
Note: 6. Parameters guaranteed by design/characterization.
PROTECTION FEATURES
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
iss
) flows into the Input pin in order to
supply the internal circuitry.
The device integrates:
– OVERVOLTAGE
CLAMP
internally set at 70V, along with the rugged
avalanche
characteristics
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
– LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input pin
voltage. When the current limiter is active, the
device operates in the linear region, so power
dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
and the ability to be driven from a TTL Logic circuit
PROTECTION:
of
the
Power
junction
overtemperature threshold T
jsh
.
– OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing the
chip temperature and are not dependent on the
input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150°C. The device is automatically
restarted when the chip temperature falls below
135°C.
– STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin. The
internal protection circuit disconnects the input
from the gate and connects it instead to ground
via an equivalent resistance of 100
. The
failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
(with a small increase in R
DS(on)
).
temperature
may
reach
the
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
SD(4)
Forward On Voltage
I
SD
= 2.5 A; V
in
= 0
1.6
V
t
rr(5)
Reverse Recovery Time
I
SD
= 2.5 A; di/dt = 100 A/μs
V
DD
= 30 V; T
j
= 25 °C
(see test circuit, Figure 30)
150
ns
Q
rr(5)
Reverse Recovery Charge
0.3
μC
I
RRM(5)
Reverse Recovery Current
5.7
A
Parameter
Test Conditions
Min.
3.5
3.5
Typ.
5
5
Max.
7
7
Unit
A
A
I
lim
Drain Current Limit
V
in
= 10 V; V
DS
= 13 V
V
in
= 5 V; V
DS
= 13 V
V
in
= 10 V
V
in
= 5 V
t
dlim(6)
Step Response Current Limit
15
40
20
60
μs
μs
T
jsh(6)
Overtemperature Shutdown
150
°C
T
jrs(6)
Overtemperature Reset
135
°C
I
gf(6)
Fault Sink Current
V
in
= 10 V; V
DS
= 13 V
V
in
= 5 V; V
DS
= 13 V
starting T
j
= 25 °C; V
DD
= 20 V
V
in
= 10 V; R
gen
= 1 K
; L = 10 mH
50
20
mA
mA
E
as(6)
Single Pulse
Avalanche Energy
0.2
J
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| VND5N07FI | 制造商:STMicroelectronics 功能描述: |
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