參數(shù)資料
型號(hào)： VND810
廠商： 意法半導(dǎo)體
英文描述： DOUBLE CHANNEL HIGH SIDE DRIVER
中文描述： 雙通道高邊驅(qū)動(dòng)器
文件頁(yè)數(shù)： 8/18頁(yè)
文件大?。?/td> 263K
代理商： VND810
8/18
VND810SP
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
GND
only). This
can be used with any type of load.
The following is an indication on how to dimension the
R
GND
resistor.
1) R
GND
≤
600mV / I
S(on)max
.
2) R
GND
≥ (
V
CC
) / (-I
GND
)
where -I
is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse
battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
will
produce a shift (I
* R
) in the input thresholds
and the status output values. This shift will vary
PROTECTION
NETWORK
AGAINST
depending on how many devices are ON in the case of
several high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 2: A diode (D
GND
) in the ground line.
A resistor (R
=1k
)
should be inserted in parallel to
D
GND
if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (
j
600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
LOAD DUMP PROTECTION
D
is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds V
max DC rating. The
same applies if the device will be subject to transients on
the V
line that are greater than the ones shown in the
ISO T/R 7637/1 table.
1
APPLICATION SCHEMATIC
1
V
CC
OUTPUT2
D
ld
+5V
R
prot
OUTPUT1
STATUS1
INPUT1
+5V
STATUS2
INPUT2
GND
+5V
μ
C
R
prot
R
prot
R
prot
D
GND
R
GND
V
GND
相關(guān)PDF資料
PDF描述
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VND810-E 功能描述:電源開(kāi)關(guān) IC - 配電 DOUBLE Ch Hi SIDE DRIVER RoHS:否 制造商:Exar 輸出端數(shù)量:1 開(kāi)啟電阻（最大值）:85 mOhms 開(kāi)啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
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VND810MSP13TR 功能描述:功率驅(qū)動(dòng)器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VND810MSP-E 功能描述:功率驅(qū)動(dòng)器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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