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參數(shù)資料
| 型號： | VND810 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | DOUBLE CHANNEL HIGH SIDE DRIVER |
| 中文描述： | 雙通道高邊驅(qū)動器 |
| 文件頁數(shù)： | 9/18頁 |
| 文件大?。?/td> | 263K |
| 代理商： | VND810 |
9/18
VND810SP
1
μ
C I/Os PROTECTION:
If a ground protection network is used and negative
transient are present on the V
line, the control pins will
be pulled negative. ST suggests to insert a resistor (R
prot
)
in line to prevent the
μ
C I/Os pins to latch-up.
The value of these resistors is a compromise between
the leakage current of
μ
C and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of
μ
C I/Os.
-V
CCpeak
/I
latchup
≤
R
prot
≤
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I
latchup
≥
20mA; V
OH
μ
C
≥
4.5V
5k
≤
R
prot
≤
65k
.
Recommended R
prot
value is 10k
.
OPEN LOAD DETECTION IN OFF STATE
Off state open load detection requires an external pull-up
resistor (R
PU
) connected between OUTPUT pin and a
positive supply voltage (V
PU
) like the +5V line used to
supply the microprocessor.
The external resistor has to be selected according to the
following requirements:
1) no false open load indication when load is connected:
in this case we have to avoid V
OUT
to be higher than
V
Olmin
; this results in the following condition
V
OUT
=(V
PU
/(R
L
+R
PU
))R
L
<V
Olmin.
2) no misdetection when load is disconnected: in this
case the V
OUT
has to be higher than V
OLmax
; this
results in the following condition R
PU
<(V
PU–
V
OLmax
)/
I
L(off2)
.
Because I
s(OFF)
may significantly increase if V
out
is pulled
high (up to several mA), the pull-up resistor R
PU
should
be connected to a supply that is switched OFF when the
module is in standby.
The values of V
OLmin
, V
OLmax
and I
L(off2)
are available in
the Electrical Characteristics section.
V
OL
V batt.
V
PU
R
PU
R
L
R
DRIVER
+
LOGIC
+
-
INPUT
STATUS
V
CC
OUT
GROUND
I
L(off2)
Open Load detection in off state
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| VND81013TR | 功能描述:功率驅(qū)動器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND810-E | 功能描述:電源開關(guān) IC - 配電 DOUBLE Ch Hi SIDE DRIVER RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VND810MSP | 功能描述:功率驅(qū)動器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND810MSP13TR | 功能描述:功率驅(qū)動器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND810MSP-E | 功能描述:功率驅(qū)動器IC Double Ch High Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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