參數(shù)資料
型號: VP0300L
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-30V,夾斷電流-0.32A的P溝道增強型MOSFET)
中文描述: P通道增強型MOSFET晶體管(最小漏源擊穿電壓- 30V的,夾斷電流,0.32A的P溝道增強型MOSFET的)
文件頁數(shù): 2/4頁
文件大?。?/td> 72K
代理商: VP0300L
VP0300L/LS, VQ2001J/P
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
11-2
Document Number: 70217
S-00591—Rev. D, 04-Apr-00
Limits
VP0300L/LS
VQ2001J/P
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –10 A
–55
–30
–30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –1 mA
–3.1
–2
–4.5
–2
–4.5
Gate-Body Leakage
B d L
I
GSS
V
DS
=
0
V, V
GS
=
16 V
100
T
J
= 125 C
500
nA
V
DS
=
0
V, V
GS
=
20 V
100
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= –24 V, V
GS
= 0 V
–10
A
T
J
= 125 C
–500
–500
V
DS
= –30 V, V
GS
= 0 V
–10
On-State Drain Current
b
I
D(on)
V
DS
=
–10
V, V
GS
=
–12
V
–2.8
–1.5
–1.5
A
Drain-Source On-Resistance
b
r
DS(on)
V
GS
=
–12
V, I
D
=
–1
A
1.5
2.5
2
T
J
= 125 C
2.6
3.6
3.6
Forward Transconductance
b
g
fs
V
DS
=
–10
V, I
D
= –0.5 A
370
200
200
mS
Common Source Output Conductance
b
g
os
V
DS
= –7.5 V, I
D
=
–0.05
A
0.25
Dynamic
Input Capacitance
C
iss
V
DS
= –15 V V
GS
= 0 V
f = 1 MHz
60
150
150
Output Capacitance
C
oss
40
100
100
pF
Reverse Transfer Capacitance
C
rss
10
60
60
Switching
c
Turn-On Time
t
ON
V
DD
=
–25
V, R
L
= 23
–1 A V
I
D
–1 A, V
= –10 V
R
G
= 25
19
30
Turn-Off Time
t
OFF
17
30
ns
Turn-On Time
t
ON
V
DD
=–15 V, R
L
= 23
I
D
–0.6 A, V
= –10 V
R
G
= 25
19
30
Turn-Off Time
t
OFF
16
30
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPEA03
2%.
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