參數(shù)資料
型號(hào): VP0300L
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-30V,夾斷電流-0.32A的P溝道增強(qiáng)型MOSFET)
中文描述: P通道增強(qiáng)型MOSFET晶體管(最小漏源擊穿電壓- 30V的,夾斷電流,0.32A的P溝道增強(qiáng)型MOSFET的)
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 72K
代理商: VP0300L
VP0300L/LS, VQ2001J/P
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
11-4
Document Number: 70217
S-00591—Rev. D, 04-Apr-00
3.0
2.5
2.0
1.5
1.0
0
0
–4
–8
–12
–16
–20
On-Resistance vs. Gate-to-Source Voltage
r
V
GS
– Gate-to-Source Voltage (V)
I
D
= –0.5 A
I
D
= –0.2 A
–1.0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
Threshold Region
–10 K
–1 K
–1
V
GS
– Gate-Source Voltage (V)
V
DS
= –10 V
25 C
–55 C
100 C
T
J
= 150 C
–100
–10
I
A
)
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, VP0300L Only)
N
T
t
1
– Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156 C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
相關(guān)PDF資料
PDF描述
VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs
VP0340N5 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 1.6A I(D) | TO-220AB
VP0340N1 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 2.7A I(D) | TO-3
VP0350N1 TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 1.5A I(D) | TO-3
VP0350N5 TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 1A I(D) | TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VP0300LS 功能描述:MOSFET 30V 0.5A 0.9W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VP0300L-TR1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 0.32A 3-Pin TO-226AA T/R
VP0300M 制造商:SIL 功能描述: 制造商:Vishay Siliconix 功能描述:
VP0340N1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 2.7A I(D) | TO-3
VP0340N5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 1.6A I(D) | TO-220AB