參數(shù)資料
型號: VP0808L
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-80V,夾斷電流-0.28A的P溝道增強(qiáng)型MOSFET)
中文描述: P通道增強(qiáng)型MOSFET晶體管(最小漏源擊穿電壓- 80V的,夾斷電流,0.28A的P溝道增強(qiáng)型MOSFET的)
文件頁數(shù): 1/4頁
文件大?。?/td> 90K
代理商: VP0808L
VP0808L, VP1008L
Vishay Siliconix
Document Number: 70218
S-00530—Rev. C, 03-Apr-00
www.vishay.com FaxBack 408-970-5600
11-1
P-Channel Enhancement-Mode MOSFET Transistors
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
VP0808L
–80
5 @ V
GS
= –10 V
5 @ V
GS
= –10 V
–2 to –4.5
–0.28
VP1008L
–100
–2 to –4.5
–0.28
High-Side Switching
Low On-Resistance: 2.5
Moderate Threshold: –3.4 V
Fast Switching Speed: 40 ns
Low Input Capacitance: 75 pF
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
VP0808L
VP1008L
Parameter
Symbol
VP0808L
VP1008L
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
–80
30
–0.28
–0.17
–3
0.8
0.32
156
–100
30
–0.28
–0.17
–3
0.8
0.32
156
V
Continuous Drain Current
(T
J
= 150 C)
Pulsed Drain Current
a
T
A
= 25 C
T
A
= 100 C
D
I
A
I
DM
Power Dissipation
T
A
= 25 C
T
A
= 100 C
P
D
W
Maximum Junction-to-Ambient
Maximum Junction-to-Case
R
thJA
R
thJC
C/W
Operating Junction and
Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
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參數(shù)描述
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