參數(shù)資料
型號: VP0808L
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-80V,夾斷電流-0.28A的P溝道增強型MOSFET)
中文描述: P通道增強型MOSFET晶體管(最小漏源擊穿電壓- 80V的,夾斷電流,0.28A的P溝道增強型MOSFET的)
文件頁數(shù): 2/4頁
文件大?。?/td> 90K
代理商: VP0808L
VP0808L, VP1008L
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
11-2
Document Number: 70218
S-00530—Rev. C, 03-Apr-00
Limits
VP0808L
VP1008L
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –10 A
–110
–80
–100
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –1 mA
–3.4
–2
–4.5
–2
–4.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
100
nA
T
J
= 125 C
500
500
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= –80 V, V
GS
= 0 V
–10
A
T
J
= 125 C
–500
V
DS
= –100 V, V
GS
= 0 V
–10
T
J
= 125 C
–500
On-State Drain Current
b
I
D(on)
V
DS
= –15 V, V
GS
=
–10
V
–2
–1.1
–1.1
A
Drain-Source On-Resistance
b
r
DS(on)
V
GS
=
–10
V, I
D
=
–1
A
2.5
5
5
T
J
= 125 C
4.4
8
8
Forward Transconductance
b
g
fs
V
DS
= –10 V, I
D
= –0.5 A
325
200
200
Common Source
Output Conductance
b
g
os
V
DS
= –7.5 V, I
D
= –0.1 A
0.45
mS
Dynamic
Input Capacitance
C
iss
V
DS
= –25 V V
GS
= 0 V
f = 1 MHz
f 1 MHz
75
150
150
Output Capacitance
C
oss
40
60
60
pF
Reverse Transfer Capacitance
C
rss
18
25
25
Switching
c
Turn-On Time
t
d(on)
V
DD
= –25 V R
L
= 47
I
D
–0.5 A, V
= –10 V
R
G
= 25
11
15
15
t
r
30
40
40
ns
Turn-Off Time
t
d(off)
20
30
30
t
f
20
30
30
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing..
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPDV10
2%.
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