參數(shù)資料
型號: VQ2004J
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V,夾斷電流-0.41A的P溝道增強(qiáng)型MOSFET)
中文描述: P通道增強(qiáng)型MOSFET晶體管(最小漏源擊穿電壓- 60V的,夾斷電流,0.41A的P溝道增強(qiáng)型MOSFET的)
文件頁數(shù): 1/4頁
文件大小: 74K
代理商: VQ2004J
VQ2004J
Siliconix
P-37655—Rev. B, 25-Jul-94
1
P-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
–60
5 @ V
GS
= –10 V
–2 to –4.5
–0.41
Features
Benefits
Applications
High-Side Switching
Low On-Resistance: 2.5
Moderate Threshold: –3.4 V
Fast Switching Speed: 40 ns
Low Input Capacitance: 75 pF
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer0
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
S
3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC
NC
G
2
G
3
S
2
D
2
D
3
P
P
P
P
Plastic: VQ2004J
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Parameter
Symbol
Single
Total Quad
Unit
Drain-Source Voltage
V
DS
–60
V
Gate-Source Voltage
V
GS
30
Continuous Drain Current (T
J
= 150 C)
T
A
= 25 C
I
D
–0.41
T
A
= 100 C
–0.23
A
Pulsed Drain Current
a
I
DM
–3
Power Dissipation
T
A
= 25 C
P
D
1.3
2
W
T
A
= 100 C
0.52
0.8
Maximum Junction-to-Ambient
R
thJA
96
62.5
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70220.
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