參數(shù)資料
型號: VQ3001J
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel/P-Channel Enhancement-Mode MOSFET Transistor Array(最小漏源擊穿電壓±30V的N/P溝道增強型MOSFET晶體管陣列)
中文描述: N-Channel/P-Channel增強型MOSFET晶體管陣列(最小漏源擊穿電壓± 30V的的N / P系列溝道增強型MOSFET的晶體管陣列)
文件頁數(shù): 1/6頁
文件大?。?/td> 82K
代理商: VQ3001J
VQ3001J/3001P
Siliconix
S-52426—Rev. C, 14-Apr-97
1
N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays
Product Summary
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
N-Channel
30
1 @ V
GS
= 12 V
2 @ V
GS
= –12 V
0.8 to 2.5
0.85
P-Channel
–30
–2 to –4.5
–0.6
Features
Benefits
Applications
Low On-Resistance: 0.8/1.6
Low Threshold: 1.5/–3.1 V
Low Input Capacitance: 38/60 pF
Fast Switching Speed: 9/16 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Plastic: VQ3001J
Sidebraze: VQ3001P
S
3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC
NC
G
2
G
3
S
2
D
2
D
3
N
P
P
N
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Single
Parameter
Symbol
N-Channel
P-Channel
Total Quad
Unit
Drain-Source Voltage
V
DS
30
30
Gate Source Voltage
Gate-Source Voltage
VQ3001J
V
GS
20
20
V
VQ3001P
20
20
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
I
D
0.85
–0.6
T
A
= 100 C
0.52
–0.37
A
Pulsed Drain Current
a
I
DM
3
–2
Power Dissipation
T
A
= 25 C
T
A
= 100 C
D
P
1.3
1.3
2
W
0.52
0.52
0.8
Maximum Junction-to-Ambient
R
thJA
T
J
, T
stg
96.2
96.2
62.5
C/W
Operating Junction and Storage Temperature Range
–55 to 150
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70221.
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