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參數(shù)資料
| 型號： | VQ3001J |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | PTH12020WASSMD_15 |
| 中文描述： | 雙N-/Dual P溝道30 V的（副）的MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 50K |
| 代理商： | VQ3001J |
VQ3001J/P
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70221
S-04279
—
Rev. D, 16-Jul-01
Limits
N-Channel
P-Channel
Parameter
Symbol
Test Condition
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source
Breakdown Voltage
V
GS
= 0 V, I
D
= 10 A
55
30
V
(BR)DSS
V
GS
= 0 V, I
D
=
–
10 A
–
55
–
30
Gate-Source
Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1.5
0.8
2.5
V
V
GS(th)
V
DS
= V
GS
, I
D
=
–
1 mA
–
3.1
–
2
–
4.5
V
DS
= 0 V, V
GS
=
20 V
100
100
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V, T
J
= 125 C
500
500
nA
V
DS
= 24 V, V
GS
= 0 V
10
Zero-Gate
Voltage Drain Current
V
DS
=
–
24 V, V
GS
= 0 V
–
10
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125 C
500
A
V
DS
=
–
24 V, V
GS
= 0 V, T
J
= 125 C
–
500
V
DS
= 10 V, V
GS
= 12 V
3
2
On-State Drain Current
b
I
D(on)
V
DS
=
–
10 V, V
GS
=
–
12 V
–
2
–
1.5
A
V
GS
= 5 V, I
D
= 0.2 A
1.2
1.75
V
GS
= 12 V, I
D
= 1 A
0.81
1.0
Drain-Source
b
On-State Resistance
r
DS(on)
V
GS
=
–
12 V, I
D
=
–
1 A
1.6
2.0
V
GS
= 12 V, I
D
= 1 A, T
J
= 125 C
1.65
2.0
V
GS
=
–
12 V, I
D
=
–
1 A, T
J
= 125 C
2.7
4.0
V
DS
= 10 V, I
D
= 0.5 A
500
250
Forward Transconductance
b
g
fs
V
DS
=
–
10 V, I
D
=
–
0.5 A
390
200
mS
Dynamic
38
110
Input Capacitance
C
iss
60
150
N-Channel
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
33
110
Output Capacitance
C
oss
P-Channel
45
100
pF
V
DS
=
–
15 V, V
GS
= 0 V, f = 1 MHz
8
35
Reverse Transfer Capacitance
C
rss
15
60
N-Channel
9
30
Turn-On Time
t
ON
V
DD
= 15
V, R
L
= 23
0.6 A, V
GEN
= 10 V, R
G
= 25
I
D
19
30
P-Channel
14
30
ns
Turn-Off Time
t
OFF
V
DD
=
–
15
V, R
L
= 23
–
0.6 A, V
GEN
=
–
10 V, R
G
= 25
I
D
16
30
Notes
a.
b.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
VNDQ03/VPEA03
2%.
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