參數(shù)資料
型號(hào): VQ3001J
廠商: Vishay Intertechnology,Inc.
英文描述: PTH12020WASSMD_15
中文描述: 雙N-/Dual P溝道30 V的(副)的MOSFET
文件頁數(shù): 5/6頁
文件大?。?/td> 50K
代理商: VQ3001J
VQ3001J/P
Vishay Siliconix
Document Number: 70221
S-04279
Rev. D, 16-Jul-01
www.vishay.com
11-5
0
1000
2000
3000
4000
5000
Gate Charge
Q
g
Total Gate Charge (pC)
V
DS
=
15 V
I
D
=
1 A
V
DS
=
24 V
I
D
=
1 A
18
15
12
9
6
3
0
0.75
0.90
1.05
1.20
1.35
1.50
1.65
50
25
0
25
50
75
100
125
150
On-Resistance vs. Junction Temperature
V
GS
=
4.5 V
I
D
=
0.5 A
T
J
Junction Temperature ( C)
V
GS
=
10 V
I
D
=
0.1 A
2.0
1.6
1.2
0.8
0.4
0
0
1
2
3
4
5
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
V
GS
=
10 V
5 V
8 V
7 V
6 V
V
GS
Gate-to-Source Voltage (V)
1000
800
600
400
200
0
0
2
4
6
8
10
T
J
=
55 C
25 C
125 C
4 V
9 V
Source-Drain Diode Forward Voltage
1.0
V
SD
Source-to-Drain Voltage (V)
2.0
3.0
4.0
10 K
1 K
1
100
10
V
DS
Drain-to-Source Voltage (V)
Capacitance
175
150
125
100
75
50
25
0
0
5
10
15
20
25
30
C
rss
C
oss
C
iss
V
= 0 V
f = 1 MHz
0
T
J
= 25 C
T
J
= 150 C
I
D
I
D
C
V
G
r
D
(
N
I
S
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