參數(shù)資料
型號: VSC7135
廠商: Vitesse Semiconductor Corporation.
英文描述: 1.25Gbits/sec Gigabit Ethernet Transceiver
中文描述: 1.25Gbits/sec千兆以太網(wǎng)收發(fā)器
文件頁數(shù): 8/16頁
文件大?。?/td> 138K
代理商: VSC7135
VITESSE
Data Sheet
VSC7135
1.25Gbits/sec
Gigabit Ethernet Transceiver
Page 8
VITESSE
SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 805/388-3700 FAX: 805/987-5896
5/28/98
G52146-0, Rev. 4.0
DC Characteristics
(Over recommended operating conditions).
Note: (1) Refer to Application Note, AN-37, for differential measurement techniques.
Absolute Maximum Ratings
(1)
Power Supply Voltage, (V
DD
)............................................................................................................-0.5V to +4V
DC Input Voltage (PECL inputs)............................................................................................-0.5V to V
DD
+0.5V
DC Input Voltage (TTL inputs)......................................................................................................... -0.5V to 5.5V
DC Output Voltage (TTL Outputs)........................................................................................-0.5V to V
DD
+ 0.5V
Output Current (TTL Outputs) ................................................................................................................ +/-50mA
Output Current (PECL Outputs)...............................................................................................................+/-50mA
Case Temperature Under Bias.........................................................................................................-55
o
to +125
o
C
Storage Temperature.................................................................................................................... -65
o
C to +150
o
C
Maximum Input ESD (Human Body Model)..............................................................................................1500 V
Recommended Operating Conditions
Power Supply Voltage, (V
DD
)................................................................................................................+3.3V+5%
Operating Temperature Range .............................................................0
o
C Ambient to +95
o
C Case Temperature
Notes:
(1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing per-
manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may
affect device reliability.
Parameters
Description
Min
Typ
Max
Units
Conditions
V
OH
V
OL
Output HIGH voltage (TTL)
Output LOW voltage (TTL)
TX Output differential peak-
to-peak voltage swing
TX Output differential peak-
to-peak voltage swing
Receiver differential peak-to-
peak Input Sensitivity RX
Input HIGH voltage (TTL)
Input LOW voltage (TTL)
Input HIGH current (TTL)
Input LOW current (TTL)
Supply voltage
2.4
V
I
OH
= -1.0 mA
I
OL
= +1.0 mA
75
to V
DD
– 2.0 V
(TX+ - TX-)
50
to V
DD
– 2.0 V
(TX+ - TX-)
Internally biased to Vdd/2
(RX+ - RX-)
0.5
V
V
OUT751
1200
2200
mVp-p
V
OUT501
1200
2200
mVp-p
V
IN1
400
3200
mVp-p
V
IH
V
IL
I
IH
I
IL
V
DD
2.0
5.5
V
0
0.8
V
μ
A
μ
A
V
V
IN
=
2.4V
V
IN
=0.5V
3.3V
±
5%
Outputs open,
V
DD
=
V
DD
max
Outputs open,
V
DD
=
V
DD
max
50
500
-500
3.14
3.47
P
D
Power dissipation
625
900
mW
I
DD
Supply Current
190
260
mA
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