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參數(shù)資料
| 型號(hào)： | W10NK60Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET |
| 中文描述： | N溝道600V的- 0.65OHM - 10A條- I2/D2PAK - TO-220/FP -到247齊保護(hù)SuperMESH商標(biāo)功率MOSFET |
| 文件頁(yè)數(shù)： | 3/19頁(yè) |
| 文件大?。?/td> | 394K |
| 代理商： | W10NK60Z |
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STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
1 Absolute maximum ratings
3/19
Table 3.
Avalanche characteristics
Table 4.
Gate-source zener diode
1.1
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER
DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the
device
’
s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device
’
s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
9
A
E
AS
Single Pulse Avalanche Energy
(starting Tj=25
°
C, I
D
=I
AR
, V
DD
= 50V)
300
mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by Tj max)
3.5
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source
Breakdown Voltage
Igs=±1mA
(Open Drain)
30
V
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