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參數(shù)資料
| 型號(hào)： | W10NK60Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET |
| 中文描述： | N溝道600V的- 0.65OHM - 10A條- I2/D2PAK - TO-220/FP -到247齊保護(hù)SuperMESH商標(biāo)功率MOSFET |
| 文件頁(yè)數(shù)： | 4/19頁(yè) |
| 文件大?。?/td> | 394K |
| 代理商： | W10NK60Z |
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2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4/19
2
Electrical characteristics
(T
CASE
= 25
°
C unless otherwise specified)
Table 5.
On/Off
Table 6.
Dynamic
Table 7.
Switching on/off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-Source Breakdown
Voltage
I
D
= 250μA, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage Drain
Current (V
GS
= 0)
V
DS
= Max Rating,
1
50
μA
I
GSS
Gate Body Leakage Current
(V
DS
= 0)
V
GS
= ±15V, V
DS
= 0
±
10
μA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
3
3.75
4.5
V
R
DS(on)
Static Drain-Source On
Resistance
V
GS
= 10 V, I
D
= 20 A
0.65
0.75
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Note
4
Forward Transconductance
V
DS
=15V, I
D
= 4.5A
7.8
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
1370
156
37
pF
pF
pF
C
oss eq.
Note
5
Equivalent Ouput Capacitance V
GS
=0, V
DS
=0V to 480V
90
pF
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=480V, I
D
= 8A
V
GS
=10V
(see Figure 19)
50
10
25
70
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
=300 V, I
D
=4A,
R
G
=4.7
,
V
GS
=10V
(see Figure 20)
20
20
ns
ns
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
=300 V, I
D
=4A,
R
G
=4.7
,
V
GS
=10V
(see Figure 20)
55
30
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
=480 V, I
D
=8A,
R
G
=4.7
,
V
GS
=10V
(see Figure 20)
18
18
36
ns
ns
ns
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