- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄245661 > W25X80ALDAIZ (WINBOND ELECTRONICS CORP) 1M X 8 FLASH 2.7V PROM, PDIP8 PDF資料下載
參數(shù)資料
| 型號： | W25X80ALDAIZ |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 1M X 8 FLASH 2.7V PROM, PDIP8 |
| 封裝： | 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8 |
| 文件頁數(shù)： | 11/45頁 |
| 文件大小： | 1342K |
| 代理商： | W25X80ALDAIZ |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁
W25X10AL, W25X20AL, W25X40AL, W25X80AL
Publication Release Date: October 7, 2009
- 19 -
Revision D
10.2.7 Read Data (03h)
The Read Data instruction allows one more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed
by a 24-bit address (A23-A0) into the DIO pin. The code and address bits are latched on the rising
edge of the CLK pin. After the address is received, the data byte of the addressed memory location
will be shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The
address is automatically incremented to the next higher address after each byte of data is shifted out
allowing for a continuous stream of data. This means that the entire memory can be accessed with a
single instruction as long as the clock continues. The instruction is completed by driving /CS high. The
Read Data instruction sequence is shown in figure 8. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of
fR (see AC Electrical Characteristics).
Figure 8. Read Data Instruction Sequence Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WS512K32L-15H1Q | 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66 |
| WS512K32L-15H1M | 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66 |
| WS512K32L-15G4TMA | 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 |
| WS512K32-45H1C | 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CPGA66 |
| WS512K32-15H1CA | 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25X80ALSNIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X80ALSNIZ | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X80ALSSIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X80ALSSIZ | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X80ALZPIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
發(fā)布緊急采購，3分鐘左右您將得到回復。