參數(shù)資料
型號: W27E02Q-90
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 256K X 8 EEPROM 5V, 90 ns, PDSO32
封裝: 8 X 14 MM, STSOP-32
文件頁數(shù): 12/16頁
文件大?。?/td> 268K
代理商: W27E02Q-90
Preliminary W27E02
Publication Release Date: April 14, 2005
- 5 -
Revision A2
Program/Erase DC Characteristics
(TA = 25
° C, VDD = 5.0V ±10 %, VHH = 12V)
LIMITS
PARAMETER
SYM.
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input Load Current
ILI
VIN = VIL or VIH
-10
-
10
A
VDD Program Current
ICP
#CE = VIL, #OE = VIH,
#PGM = VIL
-
30
mA
VDD Erase Current
ICE
#CE = VIL, #OE = VIH,
#PGM = VIL, A9 = VHH
-
30
mA
VPP Program Current
IPP
#CE = VIL, #OE = VIH,
#PGM = VIL
-
30
mA
VPP Erase Current
IPE
#CE = VIL, #OE = VIH,
#PGM = VIL, A9 = VHH
-
30
mA
Input Low Voltage
VIL
-
-0.3
-
0.8
V
Input High Voltage
VIH
-
2.4
-
5.5
V
Output Low Voltage (Verify)
VOL
IOL = 2.1 mA
-
0.45
V
Output High Voltage (Verify)
VOH
IOH = -0.4 mA
2.4
-
V
A9 Silicon I.D. Voltage
VID
-
11.5
12.0
12.5
V
A9 Erase Voltage
VID
-
11.75
12.0
14.25
V
VPP Program Voltage
VPP
-
11.75
12.0
12.25
V
VPP Erase Voltage
VPE
-
11.75
12.0
14.25
V
VDD Supply Voltage
(Program)
VCP
-
4.5
5.0
5.5
V
VDD Supply Voltage (Erase)
VCE
-
4.5
5.0
5.5
V
VDD Supply Voltage (Erase
Verify)
VPE
-
5.0
-
V
Note: VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
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