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參數(shù)資料
| 型號(hào)： | W3E32M64S-200BI |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM, 0.8 ns, PBGA219 |
| 封裝： | 25 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 9/17頁 |
| 文件大小： | 847K |
| 代理商： | W3E32M64S-200BI |
W3E32M64S-XBX
17
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
February 2007
Rev. 4
Document Title
32M x 64 DDR SDRAM Multi-Chip Package, 219 PBGA
Revision History
Rev # History
Release Date Status
Rev 0
Initial Release
August 2004
Advanced
Rev 1
Changes (Pg. 1, 10, 16, 17)
1.1 Update capacitance table values
1.2 Add thermal resistance values
1.3 Changes status to Final
January 2005
Final
Rev 2
Changes (Pg. 1, 6, 11, 12, 16, 17)
2.1 Add 333Mbs data rate
February 2006
Final
Rev 3
Changes (Pg. 1, 3, 11, 16, 17)
3.1 Correct pinout, ball L12 is active high
3.2 Add AC Input Operating Conditions Table
3.3 Add note on solder ball metallurgy
July 2006
Final
Rev 4
Changes (Pg. 1, 3, 17)
4.1 Corrected I/O typos on pinout
February 2007
Final
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PDF描述 |
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| W3HG2128M72AEF665F1MAG | 256M X 72 DDR DRAM MODULE, DMA240 |
| W7NCF02GH10CS3JG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3E32M64S-200BM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-200SBC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64S-200SBI | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 208 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E32M64S-200SBM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 208 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-250BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
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