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參數(shù)資料
| 型號： | W3EG2256M72ASSR202BJD3ISG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 512M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 |
| 封裝： | ROHS COMPLIANT, DIMM-184 |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 309K |
| 代理商： | W3EG2256M72ASSR202BJD3ISG |
W3EG2256M72ASSR-JD3
-AJD3
-BJD3
7
White Electronic Designs
March, 2007
Rev. 4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS
AC Characteristics
Symbol
335
262
263/265
202
Units
Notes
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Access window of DQs from CK, CK#
tAC
-0.7
+0.7
-0.7
+0.7
-0.75
+0.75
-0.8
+0.8
ns
CK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
16
CK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
16
Clock cycle time
CL=2.5 tCK (2.5)
6
12
7.5
12
7.5
12
8
12
ns
22
CL=2
tCK (2)
7.5
12
7.5
12
10
12
10
12
ns
22
DQ and DM input hold time relative to DQS
tDH
0.45
0.5
0.6
ns
14,17
DQ and DM input setup time relative to DQS
tDS
0.45
0.5
0.6
ns
14,17
DQ and DM input pulse width (for each input)
tDIPW
1.75
2
ns
17
Access window of DQS from CK, CK#
tDQSCK
-0.6
+0.60
-0.6
+0.60
-0.75
+0.75
-0.8
+0.8
ns
DQS input high pulse width
tDQSH
0.35
tCK
DQS input low pulse width
tDQSL
0.35
tCK
DQS-DQ skew, DQS to last DQ valid, per group,
per access
tDQSQ
0.45
0.5
ns
13,14
Write command to rst DQS latching transition
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CK rising - setup time
tDSS
0.2
tCK
DQS falling edge from CK rising - hold time
tDSH
0.2
tCK
Half clock period
tHP
tCH(MIN), tCL(MIN)
ns
18
Data-out high-impedance window from CK, CK#
tHZ
-0.70
+0.70
-0.70
+0.70
-0.75
+0.75
-0.80
+0.80
ns
8,19
Data-out low-impedance window from CK, CK#
tLZ
-0.70
+0.70
-0.70
+0.70
-0.75
+0.75
-0.80
+0.80
ns
8,20
Address and control input hold time (fast slew
rate)
tIHf
0.75
0.90
1.1
ns
6
Address and control input set-up time (fast slew
rate)
tISf
0.75
0.90
1.1
ns
6
Address and control input hold time (slow slew
rate)
tIHs
0.80
1
1.1
ns
6
Address and control input setup time (slow slew
rate)
tISs
0.80
1
1.1
ns
6
Address and control input pulse width (for each
input)
tIPW
2.2
ns
LOAD MODE REGISTER command cycle time
tMRD
12
15
16
ns
DQ-DQS hold, DQS to rst DQ to go non-valid,
per access
tQH
tHP-tQHS
ns
13,14
Data hold skew factor
tQHS
0.55
0.75
1
ns
ACTIVE to PRECHARGE command
tRAS
45
70,000
45
70,000
45
70,000
45
70,000
ns
15
ACTIVE to READ with Auto precharge
command
tRAP
18
15
20
ns
Note: These parameters serve to support
SAMSUNG components based modules
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG2256M72ASSR202JD3XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL |
| W3EG2256M72ASSR262AJD3XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL |
| W3EG2256M72ASSR262JD3XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL |
| W3EG2256M72ASSR263AJD3XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL |
| W3EG2256M72ASSR263JD3XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL |
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