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參數(shù)資料
| 型號(hào)： | W3EG2256M72ASSR202BJD3ISG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 512M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 |
| 封裝： | ROHS COMPLIANT, DIMM-184 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 309K |
| 代理商： | W3EG2256M72ASSR202BJD3ISG |
W3EG2256M72ASSR-JD3
-AJD3
-BJD3
4
White Electronic Designs
March, 2007
Rev. 4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 - 3.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 - 3.6
V
Storage Temperature
TSTG
-55 - +150
°C
Power Dissipation
PD
27
W
Short Circuit Current
I0S
50
mA
Note: Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
DC CHARACTERISTICS
0°C TA 70°C, VCC = 2.5V ± 0.2V
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
2.3
2.7
V
Supply Voltage
VCCQ
2.3
2.7
V
Reference Voltage
VREF
1.15
1.35
V
Termination Voltage
VTT
1.15
1.35
V
Input High Voltage
VIH
VREF + 0.15
VCCQ + 0.3
V
Input Low Voltage
VIL
-0.3
VREF - 0.15
V
Output High Voltage
VOH
VTT + 0.76
—
V
Output Low Voltage
VOL
—VTT - 0.76
V
CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 2.5V ± 0.2V
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A13)
CIN1
6.25
pF
Input Capacitance (RAS#, CAS#, WE#)
CIN2
6.25
pF
Input Capacitance (CKE0)
CIN3
6.25
pF
Input Capacitance (CK0,CK0#)
CIN4
5.5
pF
Input Capacitance (CS0#)
CIN5
6.25
pF
Input Capacitance (DQM0-DQM8)
CIN6
13
pF
Input Capacitance (BA0-BA1)
CIN7
6.25
pF
Data input/output capacitance (DQ0-DQ63)(DQS)
COUT
13
pF
Data input/output capacitance (CB0-CB7)
COUT
13
pF
Note: These parameters serve to support
SAMSUNG components based modules
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| W3EG2256M72ASSR202JD3XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL |
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