- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄202119 > W3EG2256M72ASSR262JD3MG (MICROSEMI CORP-PMG MICROELECTRONICS) 512M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 PDF資料下載
參數(shù)資料
| 型號(hào)： | W3EG2256M72ASSR262JD3MG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 512M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 |
| 封裝： | ROHS COMPLIANT, DIMM-184 |
| 文件頁(yè)數(shù)： | 12/14頁(yè) |
| 文件大?。?/td> | 217K |
| 代理商： | W3EG2256M72ASSR262JD3MG |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)第14頁(yè)
W3EG2256M72ASSR-JD3
-AJD3
7
White Electronic Designs
November, 04
Rev. 3
PRELIMINARY
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
IDD1 : OPERATING CURRENT: ONE BANK
1. Typical Case: VCC = 2.5V, T = 25°C
2. Worst Case: VCC = 2.7V, T = 10°C
3. Only one bank is accessed with tRC (min), Burst
Mode, Address and Control inputs on NOP edge are
changing once per clock cycle. lOUT = 0mA
4. Timing patterns
DDR200 (100MHz, CL = 2) : tCK = 10ns, CL2, BL = 4,
tRCD = 2*tCK, tRAg = 5*tCK
Read: A0 N R0 N N P0 N A0 N - repeat the same
timing with random address changing; 50% of data
changing at every burst
DDR266 (133MHz, CL = 2.5) : tCK = 7.5ns, CL = 2.5,
BL = 4, tRCD = 3*tCK, tRC = 9*tCK, tRAg = 5*tCK
Read: A0 N N R0 N P0 N N N A0 N - repeat the
same timing with random address changing; 50% of
data changing at every burst
DDR266 (133MHz, CL = 2) : tCK = 7.5ns, CL = 2, BL
= 4, tRCD = 3*tCK, tRC = 9*tCK, tRAg = 5*tCK
Read: A0 N N R0 N P0 N N N A0 N - repeat the
same timing with random address changing; 50% of
data changing at every burst
IDD7A: OPERATING CURRENT: FOUR BANKS
1. Typical Case: VCC = 2.5V, T = 25°C
2. Worst Case: VCC = 2.7V, T = 10°C
3. Four banks are being interleaved with tRC (min), Burst
Mode, Address and Control inputs on NOP edge are
not changing.
lout = 0mA
4. Timing patterns
DDR200 (100MHz, CL = 2) : tCK = 10ns, CL2, BL = 4,
tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read: A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0
- repeat the same timing with random address
changing; 100% of data changing at every burst
DDR266 (133MHz, CL = 2.5) : tCK = 7.5ns, CL =
2.5, BL = 4, tRRD = 3*tCK, tRCD = 3*tCK Read with
autoprecharge
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1
R0 - repeat the same timing with random address
changing; 100% of data changing at every burst
DDR266 (133MHz, CL = 2): tCK = 7.5ns, CL2 = 2, BL
= 4, tRRD = 2*tCK, tRCD = 3*tCK
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1
R0 - repeat the same timing with random address
changing; 100% of data changing at every burst
DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7A
Legend: A = Activate, R = Read, W = Write, P = Precharge, N = NOP
A (0-3) = Activate Bank 0-3
R (0-3) = Read Bank 0-3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3EG6433S265D3 | 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 |
| W7NCF02GH10CSA2BM1G | FLASH 3.3V PROM MODULE, XMA50 |
| W7NCF02GH10IS6CM1G | FLASH 3.3V PROM MODULE, XMA50 |
| W7NCF02GH10ISA9HM1G | FLASH 3.3V PROM MODULE, XMA50 |
| W7NCF02GH11CS4HM1G | FLASH 3.3V PROM MODULE, XMA50 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG2256M72ASSR262JD3XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL |
| W3EG2256M72ASSR263AJD3XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL |
| W3EG2256M72ASSR263JD3XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL |
| W3EG2256M72ASSR265AJD3XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL |
| W3EG2256M72ASSR265JD3XG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。