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參數(shù)資料
| 型號： | W3EG7262S-JD3 |
| 英文描述： | 512MB - 2X32Mx72 DDR SDRAM UNBUFFERED |
| 中文描述： | 512MB的- 2X32Mx72 DDR SDRAM內(nèi)存緩沖 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 230K |
| 代理商： | W3EG7262S-JD3 |
W3EG7262S-D3
-JD3
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2005
Rev. 3
PRELIMINARY
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Current
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
T
STG
P
D
I
OS
Value
-0.5 to 3.6
-1.0 to 3.6
-55 to +150
18
50
Units
V
V
°C
W
mA
Note:
Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
ABSOLUTE MAXIMUM RATINGS
DC CHARACTERISTICS
0°C
≤
T
A
≤
70°C, V
CC
= 2.5V ± 0.2V
Parameter
Supply Voltage
Supply Voltage
Reference Voltage
Termination Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Symbol
V
CC
V
CCQ
V
REF
V
TT
V
IH
V
IL
V
OH
V
OL
Min
2.3
2.3
1.15
1.15
Max
2.7
2.7
1.35
1.35
Unit
V
V
V
V
V
V
V
V
V
REF
+ 0.15
-0.3
V
TT
+ 0.76
—
V
CCQ
+ 0.3
V
REF
-0.15
—
V
TT
-0.76
CAPACITANCE
T
A
= 25°C. f = 1MHz, V
CC
= 2.5V ± 0.2V
Parameter
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0)
Input Capacitance (CK0#,CK0)
Input Capacitance (CS0#)
Input Capacitance (DQM0-DQM8)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)(DQS)
Data input/output capacitance (CB0-CB7)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
C
OUT
Max
59
59
32
56
32
13
59
13
13
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
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