參數(shù)資料
型號(hào)： W49F002U70BN
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
封裝： PLASTIC, DIP-32
文件頁(yè)數(shù)： 29/30頁(yè)
文件大小： 0K
代理商： W49F002U70BN
W49F002U
- 8 -
Programming is allowed in any sequence and across sector boundaries. Beware that a data "0" cannot
be programmed back to a "1". Only erase operations can convert "0"s to "1"s.
Refer to the Embedded Programming Algorithm using typical command strings and bus operations.
6.3.4 Chip Erase Command
Chip erase is a six-bus-cycle operation. There are two "unlock" write cycles. These are followed by
writing the "set-up" command. Two more "unlock" write cycles are then followed by the chip erase
command.
Chip erase does not require the user to program the device prior to erase. Upon executing the
Embedded Erase Algorithm command sequence the device will automatically erase and verify the
entire memory for an all one data pattern. The erase is performed sequentially on each sector at the
same time (see "Feature"). The system is not required to provide any controls or timings during these
operations.
The automatic erase begins on the rising edge of the last #WE pulse in the command sequence and
terminates when the data on DQ7 is "1" at which time the device returns to read the mode.
Refer to the Embedded Erase Algorithm using typical command strings and bus operations.
6.3.5 Sector Erase Command
Sector erase is a six bus cycle operation. There are two "unlock" write cycles. These are followed by
writing the "set-up" command. Two more "unlock" write cycles are then followed by the sector erase
command. The sector address (any address location within the desired sector) is latched on the falling
edge of #WE, while the command (30H) is latched on the rising edge of #WE.
Sector erase does not require the user to program the device prior to erase. When erasing a sector or
sectors the remaining unselected sectors are not affected. The system is not required to provide any
controls or timings during these operations.
The automatic sector erase begins after the rising edge of the #WE pulse for the last sector erase
command pulse and terminates when the data on DQ7, Data Polling, is "1."
Refer to the Embedded Erase Algorithm using typical command strings and bus operations.
6.4 Write Operation Status
6.4.1 DQ7: Data Polling
The W49F002U device features Data Polling as a method to indicate to the host that the embedded
algorithms are in progress or completed.
During the Embedded Program Algorithm, an attempt to read the device will produce the complement
of the data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt to
read the device will produce the true data last written to DQ7.
During the Embedded Erase Algorithm, an attempt to read the device will produce a "0" at the DQ7
output. Upon completion of the Embedded Erase Algorithm, an attempt to read the device will produce
a "1" at the DQ7 output.
The flowchart for Data Polling (DQ7) is shown in "Data Polling Algorithm".
For chip erase, the Data Polling is valid after the rising edge of the sixth pulse in the six #WE write
pulse sequence. For sector erase, the Data Polling is valid after the last rising edge of the sector erase
#WE pulse.
Just prior to the completion of Embedded Algorithm operations DQ7 may change asynchronously while
the output enable (#OE) is asserted low. This means that the device is driving status information on
DQ7 at one instant of time and then that byte
′s valid data at the next instant of time. Depending on
when the system samples the DQ7 output, it may read the status or valid data. Even if the device has
相關(guān)PDF資料
PDF描述
W3EG2256M72ASSR202AJD3SG 512M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
WED3DG644V75D1-S 4M X 64 SYNCHRONOUS DRAM MODULE, ZMA144
WF128K32N-120H1M 512K X 8 FLASH 12V PROM MODULE, 120 ns, CHIP66
WS1M32-35G4DI 4M X 8 MULTI DEVICE SRAM MODULE, 35 ns, QMA68
WPS512K32-35MZC 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, ZMA72
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W49F002U-90B 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
W49F002UP12B 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
W49F002UP70B 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
W49F002UP90B 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
W49F002UT12B 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*