參數(shù)資料
型號(hào): W5NK100Z
廠商: 意法半導(dǎo)體
英文描述: N-channel 1000V - 2.7з - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH⑩ Power MOSFET
中文描述: N溝道1000V - 2.7з - 3.5A的- TO-220/TO-220FP/TO-247齊保護(hù)SuperMESH⑩功率MOSFET
文件頁(yè)數(shù): 5/16頁(yè)
文件大?。?/td> 416K
代理商: W5NK100Z
STP5NK100Z - STF5NK100Z - STW5NK100Z
Electrical characteristics
5/16
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1mA, V
GS
= 0
1000
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,
Tc = 125°C
1
50
μA
μA
I
GSS
Gate body leakage current
(V
GS
= 0)
V
GS
= ± 20V
±
10
μA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100μA
3
3.75
4.5
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 1.75 A
2.7
3.7
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: pulse duration=300μs, duty cycle 1.5%
Forward transconductance V
DS
=15V, I
D
= 1.75A
4
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
1154
106
21.3
pF
pF
pF
C
osseq(2).
2.
C
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
=0, V
DS
=0V to 800V
46.8
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
V
DD
=500 V, I
D
= 1.75 A,
R
G
=4.7
,
V
GS
=10V
(see
Figure 20
)
22.5
7.7
51.5
19
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=800V, I
D
= 3.5 A
V
GS
=10V
(see
Figure 21
)
42
7.3
21.7
59
nC
nC
nC
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