參數(shù)資料
型號(hào)： W72M64VK-XBX
英文描述： 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package
中文描述： 2Mx64 3.3V的同時(shí)閃電行動(dòng)多芯片封裝
文件頁數(shù)： 3/16頁
文件大小： 568K
代理商： W72M64VK-XBX
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W72M64VK-XBX
April 2005
Rev. 0
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Supply Voltage Range (V
CC
)
Signal Voltage Range
Storage Temperature Range
Endurance (write/erase cycles)
NOTES:
1.
Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
Unit
°C
V
V
°C
cycles
-55 to +125
-0.5 to +4.0
-0.5 to Vcc +0.5
-55 to +150
1,000,000 min.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
Symbol
V
CC
T
A
T
A
Min
3.0
-55
-40
Max
3.6
+125
+85
Unit
V
°C
°C
CAPACITANCE
T
A
= +25°C, F = 1.0MHz
Parameter
WE1-4# capacitance
CS1-4# capacitance
Data I/O capacitance
Address input capacitance
RESET# capacitance
RY/BY# capacitance
OE# capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
WE
C
CS
C
I/O
C
AD
C
RS
C
RB
C
OE
Max
8
8
10
30
26
26
32
Unit
pF
pF
pF
pF
pF
pF
pF
DATA RETENTION
Parameter
Pattern Data
Retention Time
Test Conditions
150°C
125°C
Min
10
20
Unit
Years
Years
DC CHARACTERISTICS – CMOS COMPATIBLE
V
CC
= 3.3V ± 0.3V, -55°C ≤ T
A
≤ +125°C
Symbol
Conditions
I
LI
V
CC
= 3.6V, V
IN
= GND to V
CC
I
LO
V
CC
= 3.6V, V
OUT
= GND to V
CC
I
CC1
CS# = V
IL
#, OE = V
IH
, f = 5MHz
I
CC2
CS# = V
IL
#, OE = V
IH
, WE# = V
IL
I
CC3
CS# = RESET# = V
CC
± 0.3V
V
IH
= V
CC
± 0.3V;
V
IL
= V
SS
± 0.3V
I
CC6
CS# = V
IL
#, OE = V
IH
I
CC7
CS# = V
IL
#, OE = V
IH
I
CC8
CS# = V
IL
#, OE = V
IH
I
ACC
CS# = V
IL
#, OE = V
IH
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program or Erase (2,3)
V
CC
Standby Current (2)
Min
-10
-10
Max
10
10
65
120
400
Unit
μA
μA
mA
mA
μA
Automatic Sleep Mode (2,4,5)
I
CC5
400
μA
V
CC
Active Read-While-Program Current (1,2)
V
CC
Active Program-While-Erase Current (1,2)
V
CC
Active Program-While-Erase-Suspended Current (2,5)
A
CC
Accelerated Program Current
180
180
140
40
120
0.8
mA
mA
mA
mA
ACC Pin
VCC Pin
Input Low Voltage
Input High Voltage
Voltage for WP#/A
CC
Sector
Protect/Unprotect and Program Acceleration
Voltage for Autoselect and Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage (5)
NOTES:
1.
The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 8 mA/MHz, with OE# at V
IH
.
2.
Maximum I
CC
specifications are tested with V
CC
= V
CC
MAX
3.
I
CC
active while Embedded Algorithm (program or erase) is in progress.
4.
Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30ns.
5.
Not tested.
V
IL
V
IH
V
HH
-0.5
2.1
8.5
V
V
V
V
CC
= min
V
CC
= 3.0V + 0.3V
V
CC
+ 0.3
9.5
V
ID
V
OL
V
OH1
V
LKO
V
CC
= 3.0V + 0.3V
I
OL
= 4.0 mA, V
CC
= 3.0V
I
OH
= -2.0 mA, V
CC
= 3.0V
8.5
12.5
0.45
V
V
V
V
2.55
2.3
2.5
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