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參數(shù)資料
| 型號： | W82M32V-XBX |
| 英文描述： | SRAM MCP |
| 中文描述： | SRAM的MCP的 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 231K |
| 代理商： | W82M32V-XBX |
2
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
W82M32V-XBX
C
APACITANCE
(TA = +25°C)
Parameter
OE capacitance
Symbol
C
OE
Conditions
V
IN
= 0 V, f = 1.0 MHz
30
Max Unit
pF
WE
1-4
capacitance
CS
1-4
capacitance
C
WE
C
CS
V
IN
= 0 V, f = 1.0 MHz
10
V
IN
= 0 V, f = 1.0 MHz
10
pF
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
10
pF
Address input capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
30
pF
This parameter is guaranteed by design but not tested.
T
RUTH
T
ABLE
A
BSOLUTE
M
AXIMUM
R
ATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
T
A
-55
+125
°C
Storage Temperature
T
STG
-65
+150
°C
Signal Voltage Relative to GND
V
G
-0.5
4.6
V
Junction Temperature
T
J
150
°C
Supply Voltage
V
CC
-0.5
4.6
V
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable High Z
Data I/O
High Z
Data Out
Data In
Power
Standby
Active
Active
Active
R
ECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
3.0
3.6
V
Input High Voltage
V
IH
2.2
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.3
+0.8
V
DC C
HARACTERISTICS
(VCC
= 3.3V ± 0.3V, TA = -55°C to +125°C)
Parameter
Sym
Conditions
Units
Min
Max
10
Input Leakage Current
I
LI
V
IN
= GND to V
CC
μA
Output Leakage Current
I
LO
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
10
μA
Operating Supply Current (x 32 Mode)
I
CC
x 32
CS = V
IL
, OE = V
IH
, f = 5MHz, V
CC
= 3.6V
1100
mA
Standby Current
I
SB
CS = V
IH
, OE = V
IH
, f = 5MHz, V
CC
= 3.6V
400
mA
Output Low Voltage
V
OL
I
OL
= 8mA
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0mA
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V V
IL
= 0.3V
NOTE: Contact factory for ow power option.
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