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參數(shù)資料
| 型號： | W82M32V-XBX |
| 英文描述： | SRAM MCP |
| 中文描述： | SRAM的MCP的 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 231K |
| 代理商： | W82M32V-XBX |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
W82M32V-XBX
AC T
EST
C
IRCUIT
Notes:
V
Z
is programmable from -2V to +7V.
I
& I
programmable from 0 to 16mA.
Tester Impedance Z0 = 75 W.
V
Z
is typically the midpoint of V
and V
.
I
& I
are adjusted to simulate a typical resistive load
circuit. ATE tester includes jig capacitance.
AC T
EST
C
ONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
AC C
HARACTERISTICS
(VCC
= 3.3V, TA
= -55°C to +125°C)
Parameter
Symbol -12
-15 -17 -20 Units
Read Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
12
15
17
20
ns
Address Access Time
t
AA
12
15
17
20
ns
Output Hold from Address Change
t
OH
3
3
3
3
ns
Chip Select Access Time
t
ACS
12
15
17
20
ns
Output Enable to Output Valid
t
OE
7
8
8
10
ns
Chip Select to Output in Low Z
t
CLZ
1
3
3
3
3
ns
Output Enable to Output in Low Z
t
OLZ
1
1
1
1
1
ns
Chip Disable to Output in High Z
t
CHZ
1
7
8
8
10
ns
Output Disable to Output in High Z
t
OHZ
1
7
8
8
10
ns
1. This parameter is guaranteed by design but not tested.
AC C
HARACTERISTICS
(VCC
= 3.3V, TA
= -55°C to +125°C)
Parameter
Symbol -12
-15 -17 -20 Units
Write Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
12
15
17
20
ns
Chip Select to End of Write
t
CW
10
12
12
14
ns
Address Valid to End of Write
t
AW
10
12
12
14
ns
Data Valid to End of Write
t
DW
8
9
9
10
ns
Write Pulse Width
t
WP
10
12
14
14
ns
Address Setup Time
t
AS
0
0
0
0
ns
Address Hold Time
t
AH
0
0
0
0
ns
Output Active from End of Write
t
OW
1
2
2
3
3
ns
Write Enable to Output in High Z
t
WHZ
1
7
8
8
9
ns
Data Hold Time
t
DH
0
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
r
by
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