參數資料
型號: W9864G6DB
廠商: WINBOND ELECTRONICS CORP
英文描述: 1M x 4 BANKS x 16 BITS SDRAM
中文描述: 100萬× 4銀行X 16位內存
文件頁數: 9/48頁
文件大?。?/td> 1283K
代理商: W9864G6DB
W986432DH
Publication Release Date: September 4, 2001
- 9 -
Revision A3
Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to the
device. The disturb address is varied by the Burst Length as shown in Table 2
.
Table 2 Address Sequence of Sequential Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
n
BL = 2 (disturb address is A0)
Data 1
n + 1
No address carry from A0 to A1
Data 2
n + 2
BL = 4 (disturb addresses are A0 and A1)
Data 3
n + 3
No address carry from A1 to A2
Data 4
n + 4
Data 5
n + 5
BL = 8 (disturb addresses are A0, A1 and A2)
Data 6
n + 6
No address carry from A2 to A3
Data 7
n + 7
Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit in
the sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA
ACCESS ADDRESS
BUST LENGTH
Data 0
A8 A7 A6 A5 A4 A3 A2 A1 A0
BL = 2
Data 1
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 2
A8 A7 A6 A5 A4 A3 A2 A1 A0
BL = 4
Data 3
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 4
A8 A7 A6 A5 A4 A3 A2 A1 A0
BL = 8
Data 5
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 6
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 7
A8 A7 A6 A5 A4 A3 A2 A1 A0
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