參數(shù)資料
型號(hào): W987Z6CBG80
廠商: WINBOND ELECTRONICS CORP
元件分類(lèi): DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
封裝: 8 X 9 MM, 1.20 MM HEIGHT, FBGA-54
文件頁(yè)數(shù): 33/46頁(yè)
文件大?。?/td> 1634K
代理商: W987Z6CBG80
Preliminary W987Z6CB
Publication Release Date: June 24, 2002
- 39 -
Revision A1
Operating Timing Example, continued
Auto Precharge Timing (Write Cycle)
Write
Act
AP
0
11
10
9
8
7
6
5
4
3
2
1
D0
AP
Act
D1
AP
Act
D1
D2
D3
D4
D5
D6
D7
AP
Act
Write
(1) CAS Latency=2
Write
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate
command to the start of internal precgarging must be at least tRAS (min).
represents the Write with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note )
tRP
tWR
tRP
tWR
tRP
tWR
tRP
tWR
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
D0
AP
Act
AP
Act
D1
D0
AP
Act
D1
D2
D3
AP
Act
D0
D1
D2
D3
D4
D5
D6
D7
Write
D0
(2) CAS Latency=3
tRP
tWR
tRP
tWR
tRP
tWR
tRP
tWR
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
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