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參數(shù)資料
| 型號： | WED3EL7216S7ES |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| 封裝： | BGA-219 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 1001K |
| 代理商： | WED3EL7216S7ES |
10
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WED3EL7216S
POWER DISSIPATION PROJECTIONS
DESCRIPTIONS
CONDITIONS
SYMBOL
TYP
7
75
8
UNITS
NOTES
Operating Supply
All inputs Vil or Vih;
IDD
TBD
800 825 775
mA
1
Current
Cycle time tKHKH (min)
Outputs open
Standby
tKHKH = tKHKH (min)
ISB1
TBD
250 220 190
mA
Current
Device in NOP state
All Addresses / Data Static
CAPACITANCE
MAX
DESCRIPTIONS
CONDITIONS
SYM
TYP
UNITS
NOTES
Address; A0-A21
Ca
10
pF
Input/Output and IO Cntl: DQS, DQSLx, DQSHx
Cl,Co
5
pF
DQMLx, DQMHx
TA = 25 C; f = 1Mhz
Clocks; CLKx, CLKx\
Cck
10
pF
Clock Enable(s): CKEx
Ccnt.
5
pF
Note(s): Power calculated with Outputs unloaded
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