參數(shù)資料
型號: WED3EL7216S7ES
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 16M X 72 DDR DRAM, 0.75 ns, PBGA219
封裝: BGA-219
文件頁數(shù): 9/12頁
文件大?。?/td> 1001K
代理商: WED3EL7216S7ES
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WED3EL7216S
PIN DESCRIPTIONS
BGA LOCATIONS
SYMBOL
DESCRIPTION
A2, A3, A4, A13, A14
DQ0-79
Dat a I/O
B1, B2, B3, B4, B13
B14, B15, B16, C1,
C2,C3,C4,C13,C14,
C15,C16,D1,D2,D3,
D4,D13,D14,D15,D16
E1,E16,M1,M16,N1
N2,N3,N4,N13,N14,
N15,N16,P1,P2,P3,
P4,P13,P14,P15,P16
R1,R2,R3,R4,R13,
R14,R15,R16,T2,T3,
T4,T13,T14,T15,N7,
N8,N9,N10,P7,P8,P9
P10,R7,R8,R9,R10
T7,T8,T9,T10
E6, E7, E10, E11, F5,
DQSLX, DQSHX
Data Strobe: Output with read data, input with write data. DQS is
K5,L12,N5,N12,E5
edge-aligned wit h read dat a, cent ered in writ e dat a. It is used to
capture data.
B11,B12,C5,C6,E3,
VCC
Core Power Supply
F3,G3,H3,H12,H16,
J3,J12,J16,K3,L3,M3
P11,P12,R5,R6,T16
A11,A12,D5,D6,H4,
VCCQ
I/O Power Supply
H15,J4,J15,T5,T6
A5,A6,A16,B5,B6,
VSS
Ground (Digital)
C11,C12,D11,D12,
E14,F14,G14,H1,H2,
H5,H13,H14,J1,J2,J5
J13,J14,K14,L14
P5,P6,R11,R12,T1,
T11,T12, M14
E12
VREF
SSTL-2 Reference Voltage
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