參數(shù)資料
型號(hào): WEDPN16M64V-125B2M
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類(lèi): DRAM
英文描述: 16M X 64 SYNCHRONOUS DRAM, 6 ns, PBGA219
封裝: 21 X 21 MM, PLASTIC, BGA-219
文件頁(yè)數(shù): 2/15頁(yè)
文件大?。?/td> 643K
代理商: WEDPN16M64V-125B2M
10
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WEDPN16M64V-XB2X
January 2005
Rev. 1
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1, 6)
VCC = +3.3V ±0.3V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage
VCC
3
3.6
V
Input High Voltage: Logic 1; All inputs (21)
VIH
2VCC + 0.3
V
Input Low Voltage: Logic 0; All inputs (21)
VIL
-0.3
0.8
V
Input Leakage Current: Any input 0V VIN VCC (All other pins not under test = 0V)
II
-5
5
μA
Input Leakage Address Current: Any input 0V VIN VCC (All other pins not under test = 0V)
II
-20
20
μA
Output Leakage Current: I/Os are disabled; 0V VOUT VCC
IOZ
-5
5
μA
Output Levels:
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
VOH
2.4
V
VOL
0.4
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC, VCCQSupply relative to VSS
-1 to 4.6
V
Voltage on NC or I/O pins relative to VSS
-1 to 4.6
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +125
°C
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the
operational sections of this specication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
CAPACITANCE (NOTE 2)
Parameter
Symbol Max
Unit
Input Capacitance: CLK
CI1
6
pF
Addresses, BA0-1 Input Capacitance
CA
18
pF
Input Capacitance: All other input-only pins
CI2
7
pF
Input/Output Capacitance: I/Os
CIO
7
pF
IDD SPECIFICATIONS AND CONDITIONS (NOTES 1,6,11,13)
VCC = +3.3V ±0.3V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Max
Units
Operating Current: Active Mode;
Burst = 2; Read or Write; tRC = tRC (min); CAS latency = 3 (3, 18, 19)
ICC1
500
mA
Standby Current: Active Mode; CKE = HIGH; CS = HIGH;
All banks active after tRCD met; No accesses in progress (3, 12, 19)
ICC3
160
mA
Operating Current: Burst Mode; Continuous burst;
Read or Write; All banks active; CAS latency = 3 (3, 18, 19)
ICC4
540
mA
Self Refresh Current: CKE 0.2V (commercial and industrial temperature only) (27)
ICC7
10
mA
BGA THERMAL RESISTANCE
Description
Symbol Max
Unit
Notes
Junction to Ambient (No Airow)
θJA
15.6
°C/W
1
Junction to Ball
θJB
10.1
°C/W
1
Junction to Case (Top)
θJC
7.8
°C/W
1
NOTE: Refer to AN #0001 at www.whiteedc.com in the application notes section for
modeling conditions.
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