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參數(shù)資料
| 型號(hào)： | WEDPN16M64V-125B2M |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 64 SYNCHRONOUS DRAM, 6 ns, PBGA219 |
| 封裝： | 21 X 21 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 643K |
| 代理商： | WEDPN16M64V-125B2M |
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WEDPN16M64V-XB2X
January 2005
Rev. 1
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS
(NOTES 5, 6, 8, 9, 11)
Parameter
Symbol
-100
-125
-133
Unit
Min
Max
Min
Max
Min
Max
Access time from CLK (pos. edge) (28)
CL = 3
tAC (3)
7
6
5.5
ns
CL = 2
tAC (2)
7
6
ns
Address hold time
tAH
1
0.8
ns
Address setup time
tAS
2
1.5
ns
CLK high-level width
tCH
3
2.5
ns
CLK low-level width
tCL
3
2.5
ns
Clock cycle time (22)
CL = 3
tCK (3)
10
8
7.5
ns
CL = 2
tCK (2)
13
10
ns
CKE hold time
tCKH
1
0.8
ns
CKE setup time (30)
tCKS
2
1.5
ns
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
1
0.8
ns
CS#, RAS#, CAS#, WE#, DQM setup time
tCMS
2
1.5
ns
Data-in hold time
tDH
1
0.8
ns
Data-in setup time
tDS
2
1.5
ns
Data-out high-impedance time (10)
CL = 3 (10)
tHZ (3)
7
6
5.5
ns
CL = 2 (10)
tHZ (2)
7
6
ns
Data-out low-impedance time
tLZ
1
ns
Data-out hold time (load)
tOH
3
ns
Data-out hold time (no load) (29)
tOHN
1.8
ns
ACTIVE to PRECHARGE command
tRAS
50
120,000
50
120,000
50
120,000
ns
ACTIVE to ACTIVE command period
tRC
70
68
ns
ACTIVE to READ or WRITE delay
tRCD
20
ns
Refresh period (8,192 rows) – Commercial, Industrial
tREF
64
ms
Refresh period (8,192 rows) – Military
tREF
16
ms
AUTO REFRESH period
tRFC
70
ns
PRECHARGE command period
tRP
20
ns
ACTIVE bank A to ACTIVE bank B command
tRRD
20
ns
Transition time (7)
tT
0.3
1.2
0.3
1.2
0.3
1.2
ns
WRITE recovery time
(23)
tWR
1 CLK +
7ns
1 CLK +
7ns
1 CLK +
7.5ns
—
(24)
15
ns
Exit SELF REFRESH to ACTIVE command (20)
tXSR
80
75
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WEDPN16M64V-125BC | 制造商:Microsemi Corporation 功能描述:16M X 64 SDRAM MODULE, 3.3V, 125 MHZ, 219 PBGA 25MM X 25MM, - Bulk |
| WEDPN16M64V-125BI | 制造商:Microsemi Corporation 功能描述:16M X 64 SDRAM MODULE, 3.3V, 125 MHZ, 219 PBGA 25MM X 25MM, - Bulk |
| WEDPN16M64V-125BM | 制造商:Microsemi Corporation 功能描述:16M X 64 SDRAM MODULE, 3.3V, 125 MHZ, 219 PBGA 25MM X 25MM, - Bulk |
| WEDPN16M64V-133B2C | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx64 Synchronous DRAM |
| WEDPN16M64V-133B2I | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx64 Synchronous DRAM |
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