參數(shù)資料
型號: WEDPNF8M722V-1012BC
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA275
封裝: 35 X 25 MM, PLASTIC, BGA-275
文件頁數(shù): 19/41頁
文件大小: 522K
代理商: WEDPNF8M722V-1012BC
26
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPNF8M722V-XBX
FD5/FD21: Exceeded Timing Limits
FD5/FD21 will indicate whether the program or erase time has
exceeded the specified limits (internal pulse count). Under these
conditions FD5/FD21 will produce a “1”. This is a failure condition
that indicates the program or erase cycle was not successfully
completed.
The FD5/FD21 failure condition may appear if the system tries to
program a “1” to a location that is previously programmed to “0.”
Only an erase operation can change a “0” back to a “1.” Under this
condition, the device halts the operation, and when the operation
has exceeded timing limits, the FD5/FD21 bit will produce a “1”.
Under both these conditions, the system must issue the reset
command to return the device to reading array data.
FD3/FD19: Sector Erase Timer
After writing a sector erase command sequence, the system may
read FD3/FD19 to determine whether or not an erase operation has
begun. (The sector erase timer does not apply to the chip erase
command.) If additional sectors are selected for erasure, the
entire time-out also applies after each additional sector erase
command. When the time-out is completed, FD3/FD19 switches
from “0” to “1.” The system may ignore FD3/FD19 if the system can
guarantee that the time between additional sector erase commands
will always be less than 50
s. See also the “Sector Command
Sequence” section.
After the sector erase command sequence is written, the system
should read the status on FD7/FD23 (Data Polling) or FD6/FD22
(Toggle Bit I) to ensure the device has accepted the command
sequence, and then read FD3/FD19. If FD3/FD19 is high (“1”) the
internally controlled erase cycle has begun; all further commands
(other than Erase Suspend) will be ignored until the erase operation
is completed. If FD3/FD19 is low (“0”), the device will accept
additional sector erase commands. To ensure the command has
been accepted, the system software should check the status of
FD3/FD19 prior to and following each subsequent sector erase
command. If FD3/FD19 is high on the second status check, the last
command may not have been accepted. Table 8 shows the outputs
for FD3/FD19.
FIG. 8
TOGGLE BIT ALGORITHM
1. Read toggle bit twice to detemine whether or not it is toggling. See text.
2. Recheck toggle bit because it may stop toggling as FD5/FD21 changes to 1. See
text.
Start
Read Byte
(FD0-FD7, FD16-FD23)
Read Byte
(FD0-FD7, FD16-FD23) (1)
Read Byte
(FD0-FD7, FD16-FD23) (1,2)
Twice
Program/Erase
Operaton Not
Complete, Write
Reset Command
Toggle Bit
= Toggle?
FD5/FD21= 1
?
Toggle Bit
= Toggle?
No
Yes
No
Program/Erase
Operaton
Complete
No
相關(guān)PDF資料
PDF描述
WEDPZ512K72S-133BC 512K X 72 MULTI DEVICE SRAM MODULE, 4.2 ns, PBGA152
WF1024K32A-100HSC 4M X 8 FLASH 12V PROM MODULE, 100 ns, CHIP66
WF1024K32-100HSM 4M X 8 FLASH 12V PROM MODULE, 100 ns, CHIP66
WF1024K32A-150HI 4M X 8 FLASH 12V PROM MODULE, 150 ns, CHIP66
WF128K32-120G4C 512K X 8 FLASH 12V PROM MODULE, 120 ns, QMA68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WEDPNF8M722V-1012BI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package
WEDPNF8M722V-1012BM 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package
WEDPNF8M722V-1015BC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package
WEDPNF8M722V-1015BI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package
WEDPNF8M722V-1015BM 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package