參數(shù)資料
型號: WEDPZ512K72S-133BC
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: SRAM
英文描述: 512K X 72 MULTI DEVICE SRAM MODULE, 4.2 ns, PBGA152
封裝: 17 X 23 MM, PLASTIC, BGA-152
文件頁數(shù): 12/15頁
文件大小: 433K
代理商: WEDPZ512K72S-133BC
WEDPZ512K72S-XBX
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
PRELIMINARY*
White Electronic Designs Corp. reserves the right to change products or specications without notice.
November 2003
Rev. 6
Description
Symbol Conditions
150MHz
(Max)
133MHz
(Max)
100MHz
(Max)
Units
Notes
Power Supply
Current: Operating
IDD
Device Selected; All Inputs ≤ VIL or ≥ VIH; Cycle
Time ≥ TCYC MIN; VCC = MAX; Output Open
700
650
600
mA
1
Power Supply
Current: Standby
ISB2
Device Deselected; VCC = MAX; All Inputs ≤ VIL or ≥ VIH
All Inputs Static; CLK Frequency = MAX
Output Open, ZZ ≥ VCC - 0.2V
120
mA
Clock Running
Standby Current
ISB
Device Deselected; VCC = MAX; All Inputs
≤ VSS + 0.2 or VCC - 0.2; f = MAX ; ZZ ≤ VIL
180
160
mA
ABSOLUT MAXIMUM RATINGS*
VIN Voltage or any other pin relative to VSS
-0.3V to +3.6V
Voltage on VCC supply relative to VSS
-0.3V to +3.6V
Storage temperature (BGA)
-55°C to +150°C
ELECTRICAL CHARACTERISTICS
(-55°C TA +125°C)
* Stress greater than those listed under “Absolute Maximum Ratings: may cause permanent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions greater than those indicated in the operational sections of this specication is not implied. Exposure to absolute maximum rating condtions for extended
periods may affect reliability.
Description
Symbol
Conditions
Min
Max
Units
Notes
Input High (Logic 1) Voltage
VIH
1.7
VCC +0.3
V
1
Input Low (Logic 0) Voltage
VIL
-0.3
0.7
V
1
Input Leakage Current
IIL
VCC = Max, 0V VIN VCC
-4
+4
μA2
Output Leakage Current
ILO
Output(s) Disabled, VOUT = VSS to VCCQ
-2
+2
μA
Output High Voltage
VOH
IOH = -1.0mA
2.0
---
V
1
Output Low Voltage
VOL
IOL = 1.0mA
---
0.4
V
1
Supply Voltage
VCC
2.375
2.625
V
1
I/O Power Supply
VCCQ
2.375
2.625
V
1
NOTES:
1)
All voltages referenced to VSS (GND)
2)
ZZ pin has an internal pull-up and input leakage = ± 20 μA.
DC CHARACTERISTICS
(-55°C TA + 125°C)
BGA CAPACITANCE
(TA = + 25°C, f = 1MHz)
NOTE:
1)
This parameter is not tested but guaranteed by design.
Description
Symbol
Max
Units
Notes
Control Input Capacitance (LBO#, ZZ)
CIC
16
pF
1
Control Input Capacitance
CI
8pF
1
Input/Output Capacitance (DQ)
CO
10
pF
1
Address Capacitance
CA
16
pF
1
Clock Capacitance
CCK
6pF
1
NOTE:
IDD is specied with no output current and increases with faster cycle times. IDD increases with faster cycle times and greater output loading.
THERMAL RESISTANCE
Parameter
Symbol
Max
Unit
Thermal Resistance: Die Junction to Ambient
θJA
28.7
°C/W
Thermal Resistance: Die Junction to Ball
θJB
16.0
°C/W
Thermal Resistance: Die Junction to Case
θJC
7.1
°C/W
Note: Refer to Application Note “PBGA Thermal Resistance Corrleation” for further
information regarding WEDC’s thermal modeling.
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