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參數(shù)資料
| 型號： | WF128K16-60CI5 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 128K X 16 FLASH 5V PROM MODULE, 60 ns, CDIP40 |
| 封裝： | 0.600 INCH, SINGLE-CAVITY, SIDE BRAZED, CERAMIC, DIP-40 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 186K |
| 代理商： | WF128K16-60CI5 |
2
White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH
MODULES
WF128K16, WF256K16-XCX5
ABSOLUTE MAXIMUM RATINGS (1)
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is VCC + 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
CAPACITANCE
(TA = 25
°C)
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Parameter
Unit
Operating Temperature
-55 to +125
°C
Supply Voltage Range (VCC)
-2.0 to +7.0
V
Signal voltage range (any pin except A9) (2)
-2.0 to +7.0
V
Storage Temperature Range
-65 to +150
°C
Lead Temperature (soldering, 10 seconds)
+300
°C
Data Retention Mil Temp
10 years
Endurance (write/erase cycles) Mil Temp
10,000 cycles min.
A9 Voltage for sector protect (VID) (3)
-2.0 to +14.0
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
Parameter
Symbol
Conditions
128K x 16
256K x 16
Unit
Min
Max
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
VCC = 5.5, VIN = GND to VCC
10
A
VCC Active Current for Read (1)
ICC1
CS = VIL, OE = VIH
70
80
mA
VCC Active Current for Program
ICC2
CS = VIL, OE = VIH
100
110
mA
or Erase (2)
VCC Standby Current
ICC3
VCC = 5.5, CS = VIH, f = 5MHz
6
8
mA
Output Low Voltage
VOL
IOL = 12.0 mA, VCC = 4.5
0.45
V
Output High Voltage
VOH1
IOH = -2.5 mA, VCC = 4.5
0.85xVcc
V
Output High Voltage
VOH2
IOH = -100
A, VCC = 4.5
VCC -0.4
VCC -0.4
V
Low VCC Lock Out Voltage
VLKO
3.2
V
Test
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE capacitance
CWE
VIN = 0 V, f = 1.0 MHz
50
pF
CS capacitance
CCS
VIN = 0 V, f = 1.0 MHz
30
pF
I/O0-7 capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
30
pF
Address capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.0
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
A9 Voltage for Sector Protect
VID
11.5
12.5
V
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相關代理商/技術參數(shù) |
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