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參數(shù)資料
| 型號： | WS1M8-100CX |
| 英文描述： | 2x512Kx8 Dualithic SRAM(5V,2x512Kx8 Dualithic 靜態(tài)RAM（存取時間100ns）) |
| 中文描述： | 2x512Kx8 Dualithic的SRAM（5V的，2x512Kx8 Dualithic靜態(tài)隨機存儲器（存取時間100ns的）） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | WS1M8-100CX |
2
White Microelectronics Phoenix, AZ (602) 437-1520
3
S
WS1M8-XCX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
°
C
°
C
V
°
C
V
Operating Temperature
T
A
-55
+125
Storage Temperature
T
STG
-65
+150
Signal Voltage Relative to GND
V
G
-0.5
Vcc+0.5
Junction Temperature
T
J
150
Supply Voltage
V
CC
-0.5
7.0
CS
H
L
L
WE
X
H
L
Mode
Standby
Read
Write
Data I/O
High Z
Data Out
Data In
Power
Standby
Active
Active
NOTE: OE is internally tied to GND.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition
Max
Unit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
28
pF
Output capicitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
28
pF
This parameter is guaranteed by design but not tested.
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.3
-55
Max
5.5
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
CAPACITANCE
(T
A
= +25
°
C)
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Sym
Conditions
Units
Min
Max
10
10
55
2
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
I
LI
I
LO
1
I
CC
1
I
SB
1
V
OL
V
OH
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, f = 5MHz, Vcc = 5.5
CS = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 2.1mA
I
OH
= -1.0mA
μ
A
μ
A
mA
mA
V
V
2.4
Parameter
Symbol
Conditions
Units
Min
2.0
Typ
Max
5.5
Data Retention Supply Voltage
V
DR
CS
≥
V
CC
-0.2V
V
CC
= 3V
V
Data Retention Current
I
CCDR1
150
800*
μ
A
* Also available in Low Power version. Please call factory for information.
DATA RETENTION CHARACTERISTICS
(T
A
= -55
°
C to +125
°
C)
NOTE: DC test conditions: V
IH
= V
CC
-0.3V , V
IL
= 0.3V
1. OE is internally tied to GND.
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