參數(shù)資料
型號: WS1M8-100CX
英文描述: 2x512Kx8 Dualithic SRAM(5V,2x512Kx8 Dualithic 靜態(tài)RAM(存取時間100ns))
中文描述: 2x512Kx8 Dualithic的SRAM(5V的,2x512Kx8 Dualithic靜態(tài)隨機存儲器(存取時間100ns的))
文件頁數(shù): 3/5頁
文件大?。?/td> 61K
代理商: WS1M8-100CX
3
White Microelectronics Phoenix, AZ (602) 437-1520
3
S
WS1M8-XCX
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-70
-85
-100
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
70
85
100
ns
Address Access Time
t
AA
70
85
100
ns
Output Hold from Address Change
t
OH
5
5
5
ns
Chip Select Access Time
t
ACS
70
85
100
ns
Chip Select to Output in Low Z
t
CLZ
1
5
5
5
ns
Chip Disable to Output in High Z
t
CHZ
1
25
25
25
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-70
-85
-100
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
70
85
100
ns
Chip Select to End of Write
t
CW
60
75
80
ns
Address Valid to End of Write
t
AW
60
75
80
ns
Data Valid to End of Write
t
DW
30
30
40
ns
Write Pulse Width
t
WP
50
50
60
ns
Address Setup Time
t
AS
0
0
0
ns
Address Hold Time
t
AH
5
5
5
ns
Output Active from End of Write
t
OW
1
5
5
5
ns
Write Enable to Output in High Z
t
WHZ
1
25
25
35
ns
Data Hold Time
t
DH
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from-2V to +7V.
I
OL
& I
OH
programmable from0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the mdpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
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