參數(shù)資料
型號: WV3DG72256V10AD2I-MG
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 256M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
封裝: ROHS COMPLIANT, DIMM-168
文件頁數(shù): 5/9頁
文件大?。?/td> 274K
代理商: WV3DG72256V10AD2I-MG
WV3DG72256V-AD2
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
January 2006
Rev. 0
AC OPERATING TEST CONDITIONS
VCC = 3.3V, 0°C TA 70°C
Parameter
Value
Units
AC Input level (VIN/VIL)
2.4/0.4
V
Input timing measurement reference level
1.4
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
1.4
V
Output load condition
See Fig. 2
AC OPERATING TEST CONDITIONS
Parameter
Symbol
Value
Units
Notes
133/100
Row active to row active delay
tRRD(MIN)
15
ns
1
RAS# to CAS# delay
tRCD(MIN)
20
ns
1
Row Precharge time
tRP(MIN)
20
ns
1
Row active time
tRAS(MIN)
45
ns
1
tRAS(MAX)
100
μs
Row cycle time
tRC(MIN)
65
ns
1
Last data in to row precharge
tRDL(MIN)
2
CLK
2
Last data in to Active delay
tDAL(MIN)
2 CLK + tRP
Last data in to new col. address delay
tCDL(MIN)
1
CLK
1
Last data in to burst stop
tBDL(MIN)
1
CLK
2
Col. address to col. address delay
tCCD(MIN)
1
CLK
2
Number of valid output data
CAS Latency = 3
2
CLK
3
Cas Latency = 2
1
ea
4
Notes: 1. The minimum number of clock cycles is determined by driving the minimum time required with clock cycle time and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
3.3V
1220
870
Output
VOH (DC)=2.4V, IOH=-2mA
VOL (DC)=2.4V, IOL=-2mA
(Fig. 1) DC output load circuit
(Fig. 2) AC output load circuit
50pF
VTT=1.4V
50
Output
50pF
Z0 = 50
PRELIMINARY*
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