- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄202124 > WV3DG7266V10D1 (MICROSEMI CORP-PMG MICROELECTRONICS) 64M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144 PDF資料下載
參數(shù)資料
| 型號(hào)： | WV3DG7266V10D1 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144 |
| 封裝： | SODIMM-144 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 231K |
| 代理商： | WV3DG7266V10D1 |
WV3DG7266V-D1
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
August 2005
Rev. 1
PRELIMINARY
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C ≤ +70°C)
Parameter
Symbol
Conditions
Value
Units
Note
775
10
Operating current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC (min)
IO = 0mA
1170
1080
mA
1
Precharge standby current in
power-down mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
36
mA
3
ICC2PS
CKE & CLK ≤ VIL(max), tCC = ∞
36
Precharge standby current in
non power-down mode
Icc2N
CKE ≥ VIH(min), CS# ≥ VIH(min), tcc =10ns
Input signals are charged one time during 20ns
360
mA
3
ICC2NS
CKE ≥ VIH(min), CLK ≥VIL(max), tCC = ∞
Input signals are stable
180
Active standby current in
power-down mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
108
mA
3
ICC3PS
CKE & CLK ≤ VIL(max), tCC = ∞
108
Active Standby Current in
Non-Power Down Mode
ICC3N
CKE ≥ VIH(min), CS# ≥ VIH(min), tcc = 10ns Input
signals are changed one time during 20ns
540
mA
3
ICC3NS
CKE ≤ VIH(min), CLK ≤ VIL(max), tcc = ∞
Input signals are stable
450
mA
3
Operating Current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CLK
1260
1170
mA
1
Refresh Current
ICC5
tRC ≥ tRC(min)
2250
2070
1980
mA
2
Self Refresh Current
ICC6
CKE ≤ 0.2V
54
mA
3
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1 PLL & 3 Drive ICs.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WV3HG264M64EEU534D6MG | 128M X 64 DDR DRAM MODULE, 0.5 ns, DMA240 |
| WF128K32NA-120HSM | 512K X 8 FLASH 12V PROM MODULE, 120 ns, CPGA66 |
| WF128K32NA-150HSI | 512K X 8 FLASH 12V PROM MODULE, 150 ns, CPGA66 |
| WS512K32-100G2TCA | 512K X 32 MULTI DEVICE SRAM MODULE, 100 ns, CQFP68 |
| WED416S16030A10SI | 16M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WV3DG7266V75D1 | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:512MB -2x32Mx72 SDRAM, UNBUFFERED, w/PLL |
| WV3DG7266V7D1 | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:512MB -2x32Mx72 SDRAM, UNBUFFERED, w/PLL |
| WV3DG7266V-D1 | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:512MB -2x32Mx72 SDRAM, UNBUFFERED, w/PLL |
| WV3EG128M72EFSR262D3MF | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA |
| WV3EG128M72EFSR262D3MG | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。