參數(shù)資料
型號: X28LV010T-90
元件分類: EEPROM
英文描述: 128Kx8 EEPROM
中文描述: 128Kx8 EEPROM
文件頁數(shù): 13/18頁
文件大?。?/td> 141K
代理商: X28LV010T-90
X28LV010
Characteristics subject to change without notice.
13 of 18
CE Controlled Write Cycle
Page Write Cycle
Notes:
(5) Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE
HIGH to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively per-
forming a polling operation.
(6) The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to
either the CE or WE controlled write cycle timing.
Address
t
AS
t
OEH
t
WC
t
AH
t
OES
t
WPH
t
CS
t
DS
t
DH
t
CH
CE
WE
OE
High Z
Data Valid
t
CW
Data In
Data Out
WE
OE
(5)
Last Byte
Byte 0
Byte 1
Byte 2
Byte n
Byte n+1
Byte n+2
t
WP
t
WPH
t
BLC
t
WC
CE
Address *
(6)
I/O
*For each successive write within the page write operation, A
8
–A
16
should be the same or writes to an unknown address could occur.
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