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參數(shù)資料
| 型號： | X2N5114-16 |
| 廠商： | CALOGIC LLC |
| 英文描述： | P-Channel JFET Switch |
| 中文描述： | P溝道場效應(yīng)開關(guān) |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 33K |
| 代理商： | X2N5114-16 |
2N5114 – 2N5116
C ORPORATION
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified) (Continued)
SYMBOL
PARAMETER
2N5114
MIN
2N5115
MIN
2N5116
MIN
UNITS
TEST CONDITIONS
MAX
MAX
MAX
I
DSS
Drain Current at Zero Gate Voltage
(Note 1)
-30
-90
-15
-60
-5
-25
mA
V
GS
= -0
V
DS
= -18V (2N5114)
V
DS
= -15V (2N5115)
V
DS
= -15V (2N5116)
I
G
= -1mA, V
DS
= 0
V
GS
= 0
I
D
= -15mA (2N5114)
I
D
= -7mA (2N5115)
I
D
= -3mA (2N5116)
V
GS
= 0, I
D
= -1mA
V
GS(f)
Forward Gate-Source Voltage
-1
-1
-1
V
V
DS(on)
Drain-Source ON Voltage
-1.3
-0.8
-0.6
r
DS(on)
Static Drain-Source ON Resistance
75
100
150
r
ds(on)
Small-Signal Drain-Source ON
Resistance
75
100
150
V
GS
= 0, I
D
= 0, f = 1kHz
C
iss
Common-Source Input Capacitance
(Note 2)
25
25
25
pF
V
DS
= -15V, V
GS
= 0,
f = 1mHz
C
rss
Common-Source Reverse Transfer
Capacitance (Note 2)
7
7
7
V
DS
= 0
V
GS
= 12V (2N5114)
V
GS
= 7V (2N5115)
V
GS
= 5V (2N5116)
f = 1mHz
NOTES 1.
Pulse test; duration = 2ms.
2.
For design reference only, not 100% tested.
TEST CONDITIONS
2N5114
2N5115
2N5116
V
DD
-10V
-6V
-6V
V
GG
20V
12V
8V
R
L
430
910
2K
R
G
100
220
390
I
D(ON)
-15mA
-7mA
-3mA
V
IN
-12V
-7V
-5V
INPUT
OUTPUT
-6V
10%
90%
90%
10%
V
IN
r
t
d
t
r
t
10%
OFF
t
0040
V
DS(ON)
V
DD
51
1.2K
1.2K
51
SAMPLING
SCOPE
0.1
μ
F
0050
V
GG
IN
51
7.5K
V
SAMPLING SCOPE
RISE TIME 0.4ns
INPUT RESISTANCE 10M
INPUT CAPACITANCE 1.5pF
R
L
G
R
TYPICAL PERFORMANCE CHARACTERISTICS
0080
4.0
3.0
2.0
1,000
3,000
10,000
g
fs
(
μ
V)
30,000
100,000
10.0
9.0
8.0
7.0
6.0
5.0
V
p
(
V
DS
= 20V
V
= 0
(pulsed)
1.0
0.9
0.8
0.7
0.6
0.5
V
p
vs g
fs
0070
4.0
3.0
2.0
1
3
10
30
100
10.0
9.0
8.0
7.0
6.0
5.0
V
p
(
V
DS
= 20V
V
= 0
(pulsed)
1.0
0.9
0.8
0.7
0.6
0.5
V
p
vs I
DSS
DSS
t
(mA)
0060
4.0
3.0
2.0
10
30
100
300
1,000
1.0
0.9
0.8
0.7
0.6
0.5
10.0
9.0
8.0
7.0
6.0
5.0
DS(ON)
r
(ohms)
V
p
(
V
DS
V
GS
= 0.1V
= 0
V
p
DS(ON)
vs r
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