參數(shù)資料
型號(hào): X5323V14I-2.7T1
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO14
封裝: PLASTIC, TSSOP-14
文件頁(yè)數(shù): 19/21頁(yè)
文件大?。?/td> 200K
代理商: X5323V14I-2.7T1
X5323/X5325
Characteristics subject to change without notice.
7 of 21
REV 1.1.2 11/13/01
www.xicor.com
Figure 5. Read EEPROM Array Sequence
0123
456789
10
20 21 22 23 24 25
26 27 28 29 30
7
654321
0
Data Out
CS
SCK
SI
SO
MSB
High Impedance
Instruction
16 Bit Address
15 14 13
3
2
1
0
Setting the WP pin LOW while WPEN is a “1” while an
internal write cycle to the status register is in progress
will not stop this write operation, but the operation dis-
ables subsequent write attempts to the status register.
When WP is HIGH, all functions, including nonvolatile
writes to the status register operate normally. Setting
the WPEN bit in the status register to “0” blocks the WP
pin function, allowing writes to the status register when
WP is HIGH or LOW. Setting the WPEN bit to “1” while
the WP pin is LOW activates the programmable ROM
mode, thus requiring a change in the WP pin prior to
subsequent status register changes. This allows manu-
facturing to install the device in a system with WP pin
grounded and still be able to program the status regis-
ter. Manufacturing can then load conguration data,
manufacturing time and other parameters into the
EEPROM, then set the portion of memory to be pro-
tected by setting the block lock bits, and nally set the
“OTP mode” by setting the WPEN bit. Data changes
now require a hardware change.
Read Sequence
When reading from the EEPROM memory array, CS is
rst pulled low to select the device. The 8-bit READ
instruction is transmitted to the device, followed by the
16-bit address. After the READ opcode and address
are sent, the data stored in the memory at the selected
address is shifted out on the SO line. The data stored
in memory at the next address can be read sequen-
tially by continuing to provide clock pulses. The
address is automatically incremented to the next
higher address after each byte of data is shifted out.
When the highest address is reached, the address
counter rolls over to address $0000 allowing the read
cycle to be continued indenitely. The read operation is
terminated by taking CS high. Refer to the read
EEPROM Array Sequence (Figure 1).
To read the status register, the CS line is rst pulled low
to select the device followed by the 8-bit RDSR instruc-
tion. After the RDSR opcode is sent, the contents of the
status register are shifted out on the SO line. Refer to
the read status register sequence (Figure 2).
Write Sequence
Prior to any attempt to write data into the device, the
“Write Enable” Latch (WEL) must rst be set by issuing
the WREN instruction (Figure 3). CS is rst taken LOW,
then the WREN instruction is clocked into the device.
After all eight bits of the instruction are transmitted, CS
must then be taken HIGH. If the user continues the write
operation without taking CS HIGH after issuing the
WREN instruction, the write operation will be ignored.
To write data to the EEPROM memory array, the user
then issues the WRITE instruction followed by the 16
bit address and then the data to be written. Any
unused address bits are specied to be “0’s”. The
WRITE operation minimally takes 32 clocks. CS must
go low and remain low for the duration of the operation.
If the address counter reaches the end of a page and
the clock continues, the counter will roll back to the rst
address of the page and overwrite any data that may
have been previously written.
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