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參數(shù)資料
| 型號(hào)： | XB1005-BD-000V |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 35.0-45.0 GHz GaAs MMIC Buffer Amplifier |
| 中文描述： | 35000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, DIE-8 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 748K |
| 代理商： | XB1005-BD-000V |
Mimix Broadband’s three stage 35.0-45.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 23.0
dB with a noise figure of 2.7 dB across the band. This
MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave
Point-to-Point Radio, SATCOM and VSAT applications.
35.0-45.0 GHz GaAs MMIC
Buffer Amplifier
Absolute Maximum Ratings
Page 1 of 12
Features
High Dynamic Range
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
23.0 dB Small Signal Gain
2.7 dB Noise Figure at Low Noise Bias
+16 dBm P1dB Compression at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
180 mA
+0.3 VDC
+5 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
5
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id) (Vd=3.5V, Vg=-0.4V Typical)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
35.0
4.0
9.0
20.0
-
35.0
-
-
-
+16.0
-1.2
-
Typ.
-
8.0
17.0
23.0
+/-1.0
45.0
2.7
+16.0
+26.0
+18.0
+3.5
-0.4
50
Max.
45.0
-
-
27.0
-
-
3.5
-
-
-
+4.5
+0.1
154
(1) Optional low noise bias Vd1,2,3=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=4.5V, Id1=28mA, Id2=42mA, Id3=84mA.
(4) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA.
1,2,3
1,2,3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5
Chip Device Layout
3
3
3
3
4
March 2007 - Rev 06-Mar-07
B1005-BD
1,2,3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XB1005-BD-EV1 | 35.0-45.0 GHz GaAs MMIC Buffer Amplifier |
| XB1005 | 35.0-45.0 GHz GaAs MMIC Buffer Amplifier |
| XB1006 | 18.0-38.0 GHz GaAs MMIC Buffer Amplifier |
| XB1007-BD | 4.0-11.0 GHz GaAs MMIC Buffer Amplifier |
| XB1007-BD-000V | 4.0-11.0 GHz GaAs MMIC Buffer Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XB1005-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:35.0-45.0 GHz GaAs MMIC Buffer Amplifier |
| XB1005-V | 制造商:M/A-COM Technology Solutions 功能描述:MMW BUFFER AMPLIFIER |
| XB1006 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-38.0 GHz GaAs MMIC Buffer Amplifier |
| XB1006-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-38.0 GHz GaAs MMIC Buffer Amplifier |
| XB1006-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-38.0 GHz GaAs MMIC Buffer Amplifier |
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